Fabrication of high-performance and long lifetime GaAs-based laser on Si substrate

在硅衬底上制造高性能、长寿命的砷化镓基激光器

• 批准号: 06555013
• 负责人: UMENO Masayoshi
• 金额: $ 11.52万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555013/
• 关键词: Droplet epitaxy; Metalorganic chemical vapor deposition; Island; Lifetest; Laser on Si; Dislocation; Self-formed; Quantum well structure; 暗線欠陥; ピニング効果; 寿命; 量子井戸レーザー; 熱処理; 有機金属気相成長法; シリコン上ガリウム砒素

We have demonstrated 300 K lasing oscillation of the self-formed AlGaAs/GaAs laser diode on Si grown by metalorganic chemical vapor deposition for the first time. The AlGaAs/GaAs laser diodes with the self-formed GaAs islands active regions on Si substrates showed the threshold current of 260 mA,the threshold current density of 5.4 kA/cm^2 and the lasing wavelength of 791 nm with the FWHM of 2.8 nm under pulsed condition at 300 K.The self-formed GaAs islands on Si grown by the droplet epitaxy exhibited a conical shape with heights of 8 nm and effective diameters of 300 nm. Compared with the conventional quantum well laser diode on Si, the self-formed laser diode on Si exhibited the improved reliability due to the reduction of the dislocation number in the active region.

我们首次报道了用金属有机化学气相淀积方法在Si衬底上生长的自形成AlGaAs/GaAs激光二极管的300 K激光振荡。在Si衬底上自形成GaAs岛有源区的AlGaAs/GaAs激光二极管阈值电流为260 mA，在300 K脉冲条件下，阈值电流密度为5.4 kA/cm^2，激光波长为791 nm，半高宽为2.8 nm。通过液滴外延在Si上形成的GaAs岛呈现出高度为8 nm和有效直径为300 nm的圆锥形状。与传统的硅上量子阱激光二极管相比，硅上自形成激光二极管由于减少了有源区中的位错数而表现出更高的可靠性。

项目成果

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Y. Hasegawa et al.: "AlGaAs/GaAs light-emitting diode on a Si substrate with a self-formed GaAs islands active region grown by droplet epitaxy" Appl. Phys. Lett.68・4. 523-525 (1996)

Y. Hasekawa 等人：“通过液滴外延生长的具有自形成 GaAs 岛活性区域的 Si 衬底上的 AlGaAs/GaAs 发光二极管”Lett.68・4（1996 年）。

Y.hasegawa et al.: "Suppression of <100> dark-line defect growth in AlGaAs/InGaAs single quantum well lasers grown on Si substrates" Jpn.J.Appl.Phys.35・11. 5637-5641 (1996)

Y.hasekawa等人：“在Si衬底上生长的AlGaAs/InGaAs单量子阱激光器中<100>暗线缺陷生长的抑制”Jpn.J.Appl.Phys.35・11（1996）。

T.Egawa et al.: "First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy" Technical digest of International Electron Devices Meeting. 413-416 (1996)

T.Ekawa 等人：“首次在通过液滴外延生长的硅上制造具有 GaAs 岛有源区的 AlGaAs/GaAs 激光二极管”国际电子器件会议技术摘要。

T.Egawa: "Structure of AlAs/GaAs distributed Bragg reflector grown on Si substrate by metalorganic chemical vapor deposition" J. Appl. Phys.77. 3836-3838 (1995)

T.Ekawa：“通过金属有机化学气相沉积在 Si 衬底上生长的 AlAs/GaAs 分布布拉格反射器的结构”J. Appl。