Hybrid growth of Inp on Si and its application to optical devices

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1.GaAs and GaAsP are grown on Si with the intermediate layers of GaP, GaP/GaAsP strained layer superlattice (SLS) and GaAsP/GaAs SLS. AlGaAs/GaAs lasers are fabricated on Si and the threshold current is as low as 110mA at room temperature pulse conditions.Visible GaAs_<0.6>P_<0.4> LED's are fabricated on Si.The optimum intermediate layer structure between Si and InP is InP/ (InP/InGaP)SLS/(InGaP/GaP)SLS/GaP/Si.InP is grown on Si by MOCVD.2.InGaAsP is grown on GaAsP by LPE and InGaAsP lasers are fabricated on GaAsP substrate.3.InGaAsP is grown on MOCVD-grown GaAsP/Si by LPE.However,the crystal quality is poor because the dislocation density of GaAsP/Si is larger than that of GaAsP substrate.4.(MOCVD-LPE)hybrid growth will produce the high quality optical devices on Si by reducing the dislocation density in the MOCVD-grown epi-layer on Si.