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Studies on high-efficiency and low-cost compound semiconductor/Si tandem solar cell

高效率、低成本化合物半导体/硅叠层太阳能电池研究

基本信息

批准号：
06402064
负责人：
UMENO Masayoshi
金额：
$ 16.38万
依托单位：
Nagoya Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06402064/
关键词：
tandem solar cell GaAs AlGaAs Si substrate thermal cycle annealing dislocation stress minority carrier lifetime 3端子出力タイデム太陽電池 GaAs-on-Si レーザ照射転位低減応力緩和 III-V on Si

项目摘要

Compound semiconductor/Si tandem solar cell has attracted attention for high efficiency solar cell more than 30%. The important technology to obtain a high efficiency solar cell is to reduce the dislocation and the stress of GaAs on Si. We reduced the dislocation density and the stress by thermal cycle annealing (TCA) and YAG laser irradiation, respectively. The growth was performed by rf-heated metalorganic chemical vapor deposition. The dislocation density is reduced with increasing the TCA temperature during the growth. The minority carrier is improved to 3.36 ns with utilzing the 1000ﾟC TCA.The buffer layr of InGaAs/GaAs strained layr superlattice is also effective to improve the minority carrier lifetime. The bending of the dislocation was confirmed at the interfaces by the transmission electron microscopy. The dislocation density of GaAs on Si with 1000ﾟC TCA is 9*10^6 cm^<-2>. The stress-free GaAs was obtained on Si substrate with optimizing the YAG laser pulse irradiation conditions such as laser power, pulse width, number of irradiation, etc.AlGaAs/Si and GaAs/Si tandem solar cell were fabricated using the high quality cystal. The conversion efficiency was improved with utilizing the compositionally step graded emitter layr. The current matching was realized by the Al_<0.15>Ga_<0.85>As/Si tandem solar cell, and the efficiency was 21.2 % under two-terminal configuration. In the case of GaAs/Si tandem solar cell, 22.1% was obtained (top cell : 17.7%, bottom cell : 4.4%) under three-terminal configuration. This is the highest efficiency for monolithic for compound semiconductor/Si tandem solar cell as ever reported.

化合物半导体/硅叠层太阳能电池因效率超过30%而备受关注。获得高效太阳能电池的重要技术是减少GaAs对Si的位错和应力。我们分别通过热循环退火 (TCA) 和 YAG 激光照射降低位错密度和应力。通过射频加热金属有机化学气相沉积进行生长。位错密度随着生长过程中TCA温度的升高而降低。利用1000℃ TCA，少子寿命提高到3.36 ns。InGaAs/GaAs应变层超晶格的缓冲层也能有效提高少子寿命。通过透射电子显微镜证实了界面处位错的弯曲。 1000ﾟC TCA 下 GaAs 在 Si 上的位错密度为 9*10^6 cm^<-2>。通过优化YAG激光脉冲辐照条件，如激光功率、脉冲宽度、辐照次数等，在Si衬底上获得了无应力GaAs。采用高质量晶体制作了AlGaAs/Si和GaAs/Si叠层太阳能电池。通过利用成分阶梯式发射极层提高了转换效率。通过Al_<0.15>Ga_<0.85>As/Si叠层太阳能电池实现电流匹配，两端配置下效率为21.2%。对于 GaAs/Si 串联太阳能电池，在三端配置下获得了 22.1%（顶部电池：17.7%，底部电池：4.4%）。这是迄今为止报道的化合物半导体/硅串联太阳能电池单片的最高效率。