SOCRATES - SilicOn Carbide tRAnsistor Trench procEsS (SOCRATES)

SOCRATES - 碳化硅晶体管沟槽工艺 (SOCRATES)

• 批准号: 76399
• 金额: $ 17.51万
• 依托单位: SPTS TECHNOLOGIES LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=76399
• 关键词: SOCRATES; SilicOn; Carbide; tRAnsistor; Trench

SOCRATES will introduce silicon carbide (SiC) and GaN trench processing technologies to the UK, establishing a critical capability into the PEMD supply chain for power transistors. This 9-month project will define the critical semiconductor manufacturing processing steps required for introducing a disruptive SiC power MOSFET supply chain for automotive power electronics to the UK, aligned with the goals of the Driving the Electric Revolution (DER) initiative. We will establish a new UK SiC manufacturing capability - developing Trench MOSFET technology within the Materials and Components DER Centre and critically, pilot SiC trench etch processing, whilst also developing a backside SiC etch process module for future VGaN-on-SiC devices.Current SiC diodes and transistors are still based on planar devices commercialised in 2001 and 2011 respectively -- which are limited in terms of efficiency and reliability. The proposed trench technology will revolutionise the performance of SiC transistors, with lower on-state resistances, and enhanced energy efficiencies -- to be employed in automotive systems. VGaN-on-SiC devices will further drive performance and costs advantages. This project intervention will accelerate their development at little additional cost.This project addresses clear gaps in the PEMD UK supply chain; The lack of (1) a trench SiC power MOSFET process and (2) a high-volume supplier of SiC transistors for UK EV industry, with no current UK-based, high-volume 6"-8" SiC wafer fabs. In contrast, our international competitors are establishing key strategic PEMD links, in order to supply SiC devices to the future EV market; Infineon with Hyaundai, STMicroelectronics (already producing 4000 wafers per month) with Tesla and XFab with General Motors and Ford. Thus, the UK is in danger of losing its security of supply of this crucial technology to the UK automotive sector.

SOCRATES 将向英国引入碳化硅 (SiC) 和 GaN 沟槽加工技术，为功率晶体管的 PEMD 供应链建立关键能力。这个为期 9 个月的项目将定义向英国引入用于汽车电力电子的颠覆性 SiC 功率 MOSFET 供应链所需的关键半导体制造工艺步骤，与推动电动革命 (DER) 计划的目标保持一致。我们将建立新的英国 SiC 制造能力 - 在材料和组件 DER 中心内开发沟槽 MOSFET 技术，最重要的是，试点 SiC 沟槽蚀刻工艺，同时还为未来的 VGaN-on-SiC 器件开发背面 SiC 蚀刻工艺模块。当前的 SiC 二极管和晶体管仍然基于分别于 2001 年和 2011 年商业化的平面器件，这在效率和可靠性方面受到限制。拟议的沟槽技术将彻底改变 SiC 晶体管的性能，具有更低的通态电阻和更高的能效，可用于汽车系统。 VGaN-on-SiC 器件将进一步推动性能和成本优势。该项目干预将以很少的额外成本加速其开发。该项目解决了 PEMD 英国供应链中的明显差距；英国电动汽车行业缺乏 (1) 沟槽 SiC 功率 MOSFET 工艺和 (2) 大批量 SiC 晶体管供应商，目前英国没有大批量 6"-8" SiC 晶圆厂。相比之下，我们的国际竞争对手正在建立关键的战略PEMD链接，以便为未来的电动汽车市场供应SiC器件；英飞凌与现代汽车、意法半导体（已每月生产 4000 片晶圆）与特斯拉、XFab 与通用汽车和福特合作。因此，英国面临着失去向英国汽车行业提供这一关键技术的安全的危险。