Inductively-coupled plasma etching facility
Inductively-coupled plasma etching facility
批准号:
LE150100172
负责人:
Prof Benjamin Eggleton
金额:
$18.0万
依托单位:
依托单位国家:
澳大利亚
项目类别:
Linkage Infrastructure, Equipment and Facilities
财政年份:
2015
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2015-01-01 至 2016-12-31
中文摘要
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英文摘要
Inductively-coupled plasma etching facility: The aim of this project is to bring together an inductively-coupled plasma etcher with a high resolution tool for optical lithography to create a facility capable of producing nano-structures in silicon surfaces. Such structures are the basis of high performance photonic, nano-electronic, and MicroElectroMechanical (MEM) devices. The lithography tool is a step-and-repeat system capable of exceptionally high rates of throughput so this etcher will be a crucial enabling tool for efficient fabrication of nano-devices for research into quantum computing, high bandwidth, quantum-secure optical communications, renewable energy, and for applications in medicine. The etcher will be available for national access.
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依托单位:
国内基金
海外基金
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