Inductively-coupled plasma etching facility

感应耦合等离子蚀刻设备

• 批准号: LE150100172
• 负责人: Prof Benjamin Eggleton
• 金额: $ 18万
• 依托单位: The University of Sydney
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Infrastructure, Equipment and Facilities
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2016-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LE150100172
• 关键词: Inductively; coupled; plasma; etching; facility

Inductively-coupled plasma etching facility: The aim of this project is to bring together an inductively-coupled plasma etcher with a high resolution tool for optical lithography to create a facility capable of producing nano-structures in silicon surfaces. Such structures are the basis of high performance photonic, nano-electronic, and MicroElectroMechanical (MEM) devices. The lithography tool is a step-and-repeat system capable of exceptionally high rates of throughput so this etcher will be a crucial enabling tool for efficient fabrication of nano-devices for research into quantum computing, high bandwidth, quantum-secure optical communications, renewable energy, and for applications in medicine. The etcher will be available for national access.

电感耦合等离子体蚀刻设备：该项目的目的是将电感耦合等离子体蚀刻机与高分辨率光学光刻工具结合在一起，以创建能够在硅表面生产纳米结构的设备。这种结构是高性能光子、纳米电子和微机电（MEM）器件的基础。光刻工具是一个步进重复系统，能够非常高的吞吐率，因此这种蚀刻机将是一个关键的使能工具，用于有效制造纳米器件，用于研究量子计算，高带宽，量子安全光通信，可再生能源和医学应用。蚀刻机将供全国使用。