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Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications

适用于高温、恶劣环境应用的硅-碳化硅 (Si/SiC) 功率器件

基本信息

批准号：
EP/N00647X/1
负责人：
Peter Gammon
金额：
$ 12.62万
依托单位：
University of Warwick
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2015
资助国家：
英国
起止时间：
2015 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FN00647X%2F1
关键词：
Silicon Carbide Si SiC Power

项目摘要

Several problems facing society in the 21st century share a common problem: that when electronic devices heat up, they become inefficient, wasting energy. It is therefore the case that in your laptop there is significant space, weight and significant design cost associated with implementing the right cooling system to efficiently extract the heat. The laptop is however, a relatively low-power system, operating on earth at a rather pleasant 20C room temperature. Engineers are regularly facing this problem on a much larger scale, in much ambient temperatures, and in a situation where it is often difficult, expensive and often highly impractical to implement active cooling. Oil and gas engineers, attempting to harvest the fossil fuels we are still highly dependent on, face exactly this problem with the electronics that are driving the cutting tool motor. Power electronic devices delivering hundreds of Watts of power to the motor must do so in an ambient that can exceed 225C, operating miles under the ground with only slurry pumped from the surface to cool the devices. Similarly, electric cars are forced into restrictive design choices keeping the electronics as far from the engine as possible to minimise the cooling requirements. In space, near-sun planetary explorers are essentially floating refrigerators, the inner cabin cooled, at great cost to eventual mission length, down to earth-like temperatures when the temperature outside can exceed 300C around Venus or Mercury. The potential benefit for having electronics operating in these environments without cooling is huge, leading to greater efficiency, reliability and mission length, saving space, weight and importantly cost.This project looks to redesign the silicon device and to push its thermal behaviour to the absolute limit, so minimising the need for cooling, or eliminating it entirely. This is to be done by combining it with another material, silicon carbide, that will act as a heat sink placed within fractions of a micro-meter of the active device itself. These new Silicon-on-Silicon Carbide (Si/SiC) devices are expected to offer gains in device efficiency over any existing silicon device operating at elevated temperature. Alternatively, the same level of performance could be retained as with existing solutions, except at temperatures as much as 100C higher, or at much higher power (as much as 4x). The power transistor, implemented entirely with the silicon thin film, is a laterally-diffused metal-oxide-semiconductor field effect transistor (LD-MOS) or a lateral insulated gate bipolar transistor (L-IGBT), similar to those that have been developed for silicon on insulator (SOI) or silicon-on-sapphire. These devices shall be optimised for breakdown voltages rated from 50 to 600 V, making the devices ideal for applications such as downhole motor drives required by project partner Halliburton, and for solar array inverters destined for space.

世纪社会面临的几个问题都有一个共同的问题：当电子设备发热时，它们会变得效率低下，浪费能源。因此，在您的笔记本电脑中，与实施正确的冷却系统以有效地提取热量相关的空间，重量和显著的设计成本都很大。然而，笔记本电脑是一个相对低功耗的系统，在地球上运行在一个相当舒适的20摄氏度的室温下。工程师们经常在更大的规模上、在更高的环境温度下以及在实施主动冷却通常困难、昂贵且通常非常不切实际的情况下面临这个问题。石油和天然气工程师，试图收获我们仍然高度依赖的化石燃料，面临着驱动切割工具电机的电子设备的问题。向电机提供数百瓦功率的电力电子设备必须在可能超过225摄氏度的环境中工作，在地下数英里处工作，只有从地面泵送的泥浆才能冷却设备。类似地，电动汽车被迫进行限制性的设计选择，使电子设备尽可能远离发动机，以最大限度地减少冷却需求。在太空中，靠近太阳的行星探险家基本上是浮动的冰箱，内部舱冷却，最终使命长度的巨大成本，当金星或水星周围的外部温度超过300摄氏度时，温度下降到与地球相似的温度。电子设备在这些环境中工作而无需冷却的潜在好处是巨大的，可以提高效率、可靠性和使命长度，节省空间、重量和重要的成本。该项目旨在重新设计硅器件，并将其热行为推到绝对极限，从而最大限度地减少冷却需求，或完全消除冷却需求。这是通过将其与另一种材料碳化硅结合来实现的，碳化硅将作为放置在有源器件本身的几分之一微米内的散热器。这些新的碳化硅上硅（Si/SiC）器件有望提供比在高温下操作的任何现有硅器件更高的器件效率。或者，可以保持与现有解决方案相同的性能水平，除非温度高出100 ℃或功率高得多（高达4倍）。完全用硅薄膜实现的功率晶体管是横向扩散金属氧化物半导体场效应晶体管（LD-MOS）或横向绝缘栅双极晶体管（L-IGBT），类似于已经为绝缘体上硅（SOI）或蓝宝石上硅开发的那些。这些器件应针对额定击穿电压从50 V到600 V进行优化，使这些器件成为项目合作伙伴Halliburton所需的井下电机驱动器等应用以及用于太空的太阳能电池阵列逆变器的理想选择。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs

DOI：
10.4028/www.scientific.net/msf.897.557
发表时间：
2016-09
期刊：
Materials Science Forum
影响因子：
0
作者：
Lee J. Woodend-;P. Gammon;V. Shah;A. Pérez‐Tomás;Fan Li;D. Hamilton;M. Myronov;P. Mawby
通讯作者：
Lee J. Woodend-;P. Gammon;V. Shah;A. Pérez‐Tomás;Fan Li;D. Hamilton;M. Myronov;P. Mawby

Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation

通过器件仿真研究用于实现线性掺杂功率 LDMOS 的 Si/SiC 衬底