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Pnictogen-based semiconductors for Harvesting EneRgy from Ambient Light to power autonomous Devices (HERALD)

Pnictogen-based semiconductors for Harvesting EneRgy from Ambient Light to power autonomous Devices (HERALD)
用于从环境光中收集能量为自主设备供电的基于 Pnictogen 的半导体 (HERALD)
批准号:
EP/X022900/1
负责人:
Robert L. Z. Hoye
金额:
$164.68万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2022
资助国家:
英国
项目状态:
未结题
起止时间:
2022 至 --

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中文摘要
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英文摘要
HERALD aims to instigate a step-change in how smart devices are powered by developing new classes of pnictogen-based semiconductors to more efficiently collect the widely-available energy from lighting inside buildings. Such energy can be renewably harvested with indoor photovoltaics (IPV), which is highly appealing for powering the billions of autonomous smart devices driving the fourth industrial revolution. However, industry-standard IPV (hydrogenated amorphous silicon; a-Si:H) have efficiencies up to only ~20%, with most commercial devices <10% efficient.HERALD will develop IPV from novel classes of rudorffites and chalcohalides, which have potential to reach >48% efficiency under indoor lighting. These are low-toxicity, high-stability materials based on the pnictogens bismuth and antimony, and their considerable potential for indoor light harvesting is just starting to emerge. HERALD will transform these novel compounds into leading IPV using a hierarchical characterisation approach, from the macro- to near-atomic-scale. Along the way, fundamental understanding will be gained to learn what the performance-limiting factors are and how they can be systematically mitigated. The endpoint will be high-performing, durable test devices with low environmental impact. The materials will be rapidly grown at scale using a novel plasma-spray technique, and the IPV prototyped in commercial smart devices.The pnictogen-based IPV developed can have a transformative impact on smart devices by decreasing their reliance on being powered only by batteries, which need to be regularly replaced, creating significant waste. The new IPV can be deployed without harming the environment and will harvest more power than a-Si:H IPV to sustain smart devices with more advanced capabilities. The pioneering development of pnictogen-based semiconductors will also push them forward for numerous PV, from clean solar fuel production to radiation detection for medical imaging.
期刊论文(5)
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科研奖励(0)
会议论文
Air-stable bismuth sulfobromide (BiSBr) visible-light absorbers: optoelectronic properties and potential for energy harvesting
空气稳定的磺溴化铋 (BiSBr) 可见光吸收剂:光电特性和能量收集潜力
DOI: 10.1039/d3ta04491b
发表时间: 2023
期刊: Journal of Materials Chemistry A
影响因子: 11.9
作者: [Guo X]
通讯作者: Guo X
Data-Driven Controlled Synthesis of Oriented Quasi-Spherical CsPbBr3 Perovskite Materials.
数据驱动的定向准球形 CsPbBr3 钙钛矿材料的受控合成。
DOI: 10.1002/anie.202319480
发表时间: 2024
期刊: Angewandte Chemie (International ed. in English)
影响因子: --
作者: [Liu S]
通讯作者: Liu S
Halide Perovskites and their Derivatives for Efficient, High-Resolution Direct Radiation Detection: Design Strategies and Applications
用于高效、高分辨率直接辐射检测的卤化物钙钛矿及其衍生物:设计策略和应用
DOI: 10.1002/adma.202304523
发表时间: 2023
期刊: Advanced Materials
影响因子: 29.4
作者: [Dudipala K]
通讯作者: Dudipala K
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    EP/Y032942/1
  • 项目类别:
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  • 资助金额:
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  • 财政年份:
    2024
  • 负责人:
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  • 财政年份:
    2023
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    Robert L. Z. Hoye
  • 依托单位:
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    EP/V014498/1
  • 项目类别:
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  • 资助金额:
    $55.72万
  • 财政年份:
    2021
  • 负责人:
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