Pnictogen-based semiconductors for Harvesting EneRgy from Ambient Light to power autonomous Devices (HERALD)

用于从环境光中收集能量为自主设备供电的基于 Pnictogen 的半导体 (HERALD)

• 批准号: EP/X022900/1
• 负责人: Robert L. Z. Hoye
• 金额: $ 164.68万
• 依托单位: University of Oxford
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FX022900%2F1
• 关键词: Pnictogen; based; semiconductors; Harvesting; EneRgy

HERALD aims to instigate a step-change in how smart devices are powered by developing new classes of pnictogen-based semiconductors to more efficiently collect the widely-available energy from lighting inside buildings. Such energy can be renewably harvested with indoor photovoltaics (IPV), which is highly appealing for powering the billions of autonomous smart devices driving the fourth industrial revolution. However, industry-standard IPV (hydrogenated amorphous silicon; a-Si:H) have efficiencies up to only ~20%, with most commercial devices <10% efficient.HERALD will develop IPV from novel classes of rudorffites and chalcohalides, which have potential to reach >48% efficiency under indoor lighting. These are low-toxicity, high-stability materials based on the pnictogens bismuth and antimony, and their considerable potential for indoor light harvesting is just starting to emerge. HERALD will transform these novel compounds into leading IPV using a hierarchical characterisation approach, from the macro- to near-atomic-scale. Along the way, fundamental understanding will be gained to learn what the performance-limiting factors are and how they can be systematically mitigated. The endpoint will be high-performing, durable test devices with low environmental impact. The materials will be rapidly grown at scale using a novel plasma-spray technique, and the IPV prototyped in commercial smart devices.The pnictogen-based IPV developed can have a transformative impact on smart devices by decreasing their reliance on being powered only by batteries, which need to be regularly replaced, creating significant waste. The new IPV can be deployed without harming the environment and will harvest more power than a-Si:H IPV to sustain smart devices with more advanced capabilities. The pioneering development of pnictogen-based semiconductors will also push them forward for numerous PV, from clean solar fuel production to radiation detection for medical imaging.

HERALD旨在通过开发新型的基于氮族元素的半导体来更有效地收集建筑物内照明中广泛可用的能量，从而推动智能设备供电方式的逐步改变。这种能源可以通过室内光伏（IPV）可再生地收集，这对于推动第四次工业革命的数十亿自主智能设备的供电具有很大的吸引力。然而，行业标准的IPV（氢化非晶硅; a-Si：H）的效率仅为~ 20%，大多数商业设备的效率<10%。HERALD将从新型的鲁多夫石和硫族卤化物中开发IPV，这些材料在室内照明下有可能达到>48%的效率。这些都是基于磷属元素铋和锑的低毒性、高稳定性材料，它们在室内集光方面的巨大潜力才刚刚开始显现。HERALD将使用从宏观到近原子尺度的分层表征方法将这些新化合物转化为领先的IPV。沿着，将获得基本的理解，了解性能限制因素是什么，以及如何系统地减轻它们。端点将是高性能、耐用、对环境影响低的测试设备。这些材料将使用新型等离子体喷涂技术大规模快速生长，并在商业智能设备中原型化IPV。开发的基于氮族元素的IPV可以通过减少智能设备对电池供电的依赖，对智能设备产生变革性影响，这些智能设备需要定期更换电池，造成大量浪费。新的IPV可以在不损害环境的情况下部署，并将获得比a-Si：H IPV更多的功率，以支持具有更先进功能的智能设备。基于氮氧化物的半导体的开创性发展也将推动它们在许多光伏领域的应用，从清洁太阳能燃料生产到医学成像的辐射检测。

项目成果

Air-stable bismuth sulfobromide (BiSBr) visible-light absorbers: optoelectronic properties and potential for energy harvesting

空气稳定的磺溴化铋 (BiSBr) 可见光吸收剂：光电特性和能量收集潜力

• DOI: 10.1039/d3ta04491b
• 发表时间: 2023
• 期刊: Journal of Materials Chemistry A
• 影响因子: 11.9
• 作者: Guo X

Data-Driven Controlled Synthesis of Oriented Quasi-Spherical CsPbBr3 Perovskite Materials.

数据驱动的定向准球形 CsPbBr3 钙钛矿材料的受控合成。

• DOI: 10.1002/anie.202319480
• 发表时间: 2024
• 期刊: Angewandte Chemie (International ed. in English)
• 作者: Liu S

Halide Perovskites and their Derivatives for Efficient, High-Resolution Direct Radiation Detection: Design Strategies and Applications

用于高效、高分辨率直接辐射检测的卤化物钙钛矿及其衍生物：设计策略和应用

• DOI: 10.1002/adma.202304523
• 发表时间: 2023
• 期刊: Advanced Materials
• 影响因子: 29.4
• 作者: Dudipala K