Pnictogen-based semiconductors for Harvesting EneRgy from Ambient Light to power autonomous Devices (HERALD)

《先驱报》旨在推动智能设备供电方式的一步改变，方法是开发新型的基于pNictogen的半导体，以更有效地从建筑物内的照明中收集广泛可用的能量。这种能源可以通过室内光伏(IPV)可再生地获取，这种光伏非常有吸引力，可以为推动第四次工业革命的数十亿自主智能设备提供动力。然而，行业标准的IPV(氢化非晶硅；a-Si：H)的效率仅为~20%，而大多数商用设备的效率为10%。HERALD将利用新型的橄榄石和硫卤化物开发IPV，这些材料在室内照明下的效率可能达到48%。这些都是基于铋和锑的低毒、高稳定性材料，它们在室内采光方面的巨大潜力才刚刚开始显现。先驱报将使用从宏观到近原子尺度的分层表征方法，将这些新化合物转化为领先的IPV。在此过程中，将获得基本的理解，以了解什么是性能限制因素以及如何系统地减轻这些因素。终端将是高性能、耐用、对环境影响较小的测试设备。这些材料将使用一种新的等离子喷涂技术进行快速规模化生长，并在商业智能设备中制作原型。开发的基于pNictogen的IPV可以对智能设备产生革命性影响，因为它减少了对仅由电池供电的依赖，而电池需要定期更换，从而造成大量浪费。新的IPV可以在不损害环境的情况下部署，并将获得比a-Si：H IPV更多的电力，以支持具有更先进能力的智能设备。基于pNictogen的半导体的开创性发展也将推动它们在许多光伏领域取得进展，从清洁的太阳能燃料生产到医学成像的辐射检测。

HERALD aims to instigate a step-change in how smart devices are powered by developing new classes of pnictogen-based semiconductors to more efficiently collect the widely-available energy from lighting inside buildings. Such energy can be renewably harvested with indoor photovoltaics (IPV), which is highly appealing for powering the billions of autonomous smart devices driving the fourth industrial revolution. However, industry-standard IPV (hydrogenated amorphous silicon; a-Si:H) have efficiencies up to only ~20%, with most commercial devices <10% efficient.HERALD will develop IPV from novel classes of rudorffites and chalcohalides, which have potential to reach >48% efficiency under indoor lighting. These are low-toxicity, high-stability materials based on the pnictogens bismuth and antimony, and their considerable potential for indoor light harvesting is just starting to emerge. HERALD will transform these novel compounds into leading IPV using a hierarchical characterisation approach, from the macro- to near-atomic-scale. Along the way, fundamental understanding will be gained to learn what the performance-limiting factors are and how they can be systematically mitigated. The endpoint will be high-performing, durable test devices with low environmental impact. The materials will be rapidly grown at scale using a novel plasma-spray technique, and the IPV prototyped in commercial smart devices.The pnictogen-based IPV developed can have a transformative impact on smart devices by decreasing their reliance on being powered only by batteries, which need to be regularly replaced, creating significant waste. The new IPV can be deployed without harming the environment and will harvest more power than a-Si:H IPV to sustain smart devices with more advanced capabilities. The pioneering development of pnictogen-based semiconductors will also push them forward for numerous PV, from clean solar fuel production to radiation detection for medical imaging.