Instilling Defect-Tolerance in ABZ2 Photovoltaic Materials

向 ABZ2 光伏材料灌输缺陷容限

• 批准号: EP/V014498/1
• 负责人: Robert L. Z. Hoye
• 金额: $ 55.72万
• 依托单位: Imperial College London
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FV014498%2F1
• 关键词: Instilling; Defect; Tolerance; ABZ2; Photovoltaic

This project aims to develop a new class of semiconductors for photovoltaics (PVs) that can tolerate defects to achieve high efficiencies when manufactured by low capital-intensity and scalable methods. PVs produce clean electricity from sunlight, and their deployment in the UK needs to accelerated by over an order of magnitude so that we can meet our legislated net-zero CO2 emissions target by 2050. New thin film PV materials are urgently needed. Thin film PVs can be used in tandem device structures, in which they are deposited on top of silicon PVs (which dominate the market) or smaller-bandgap thin film PVs. These tandem devices convert a larger fraction of the solar spectrum into electrical energy and can achieve efficiencies surpassing the best single-junction devices, which will be vital for accelerating utility-scale PV deployment. Thin film PVs can also be used as energy-harvesting roof-tiles, windows or cladding to enable sustainable carbon-neutral buildings. But across all applications, it is essential that the materials are efficient when made with by low cost manufacturing methods. The limiting factor is the deleterious role of point defects, such as vacancies. In traditional semiconductors, these point defects introduce energy levels deep within the bandgap and cause irreversible losses in energy. Minimising the density of these defects often requires expensive manufacturing routes. Defect-tolerant semiconductors circumvent these limitations by forming defect levels close to the band-edges (i.e., shallow), where they are less harmful. Such materials were rare until the recent serendipitous discovery of the lead-halide perovskites. Grown cheaply by solution-processing, these polycrystalline materials have over a million times more defects than silicon but are already more efficient in PVs than multi-crystalline silicon. A critical question is whether defect-tolerance can be found in other classes of materials that are free from the toxicity burden of the halide perovskites. This work aims to develop a set of design rules to pinpoint lead-free defect-tolerant semiconductors, and systematically develop these materials into efficient, stable PVs that can be deployed on the terawatt scale. The materials focussed on are ABZ2 compounds, where A is a monovalent cation, B a divalent cation and Z a divalent anion. These materials already show promising signs hinting at defect-tolerance. My approach draws off my experimental strengths in the control of complex thin films. I hypothesise that materials forming shallow traps can be identified through their crystal structure, band-edge orbital composition and degree of cation-anion orbital overlap. I will experimentally elucidate the role of each property by tuning the composition of a small set of ABZ2 materials to vary one property at a time. Defect tolerance will be measured by intentionally inducing vacancies and measuring their effect on charge-carrier lifetime and electronic structure. These design rules will be applied to identify the most promising ABZ2 materials, which will be grown by scalable solution- and vapour-based methods. I will optimise their growth using a fast experimental feedback loop to achieve materials with promising bulk properties for solar absorbers. Such materials will be developed into PVs, drawing off my skills and experience in device engineering. This work is extremely timely and will lead the emerging area of defect-tolerant semiconductors away from toxic perovskites. The new materials can ultimately become commercial contenders for tandem or building-integrated PVs, and therefore impact on the £120B PV industry. These new materials can also have much broader impact and be used, for example, as cheap but efficient materials for clean solar fuel production or biosensors. This project sets the key foundations for achieving these exciting possibilities and will enable me to set-up my group with a cutting-edge programme.

该项目旨在开发一种新的用于光电子器件（PV）的半导体，该半导体可以容忍缺陷，从而在通过低资本强度和可扩展的方法制造时实现高效率。太阳能光伏发电利用阳光产生清洁电力，它们在英国的部署需要加快一个数量级以上，以便我们能够在2050年之前实现我们的法定净零二氧化碳排放目标。人们迫切需要新的薄膜光伏材料。薄膜PV可用于串联器件结构，其中它们沉积在硅PV（占主导地位的市场）或带隙较小的薄膜PV的顶部。这些串联设备将更大部分的太阳光谱转换为电能，并且可以实现超越最好的单结设备的效率，这对于加速公用事业规模的光伏部署至关重要。薄膜PV还可以用作能量收集屋顶瓦片，窗户或覆层，以实现可持续的碳中性建筑。但在所有应用中，通过低成本制造方法制造的材料必须是高效的。限制因素是点缺陷（例如空位）的有害作用。在传统半导体中，这些点缺陷在带隙内引入能级，并导致不可逆的能量损失。最小化这些缺陷的密度通常需要昂贵的制造路线。缺陷容限半导体通过形成靠近带边缘的缺陷能级（即，#21453;，在那里，他们的危害更小。在最近偶然发现铅卤化物钙钛矿之前，这种材料是罕见的。这些多晶材料通过溶液处理廉价生长，其缺陷比硅多一百万倍，但在PV方面已经比多晶硅更有效。一个关键的问题是，是否可以在其他类型的材料中发现缺陷容限，这些材料没有卤化物钙钛矿的毒性负担。这项工作旨在开发一套设计规则，以确定无铅缺陷容忍半导体，并系统地将这些材料开发成可以在太瓦级部署的高效，稳定的PV。所关注的材料是ABZ 2化合物，其中A是一价阳离子，B是二价阳离子，Z是二价阴离子。这些材料已经显示出有希望的迹象，暗示着缺陷容忍度。我的方法利用了我在控制复杂薄膜方面的实验优势。我假设，形成浅陷阱的材料可以通过它们的晶体结构，带边轨道组成和阳离子-阴离子轨道重叠的程度来确定。我将通过调整一小组ABZ 2材料的组成，每次改变一种属性，来实验性地阐明每种属性的作用。缺陷容限将通过有意诱导空位并测量它们对电荷载流子寿命和电子结构的影响来测量。这些设计规则将被应用于确定最有前途的ABZ 2材料，这些材料将通过可扩展的基于溶液和蒸汽的方法生长。我将使用快速实验反馈回路来优化它们的生长，以获得具有太阳能吸收器的有前途的大块特性的材料。这些材料将被开发成PV，利用我在设备工程方面的技能和经验。这项工作非常及时，将引领新兴的缺陷容忍半导体领域远离有毒的钙钛矿。这些新材料最终可能成为串联或建筑一体化光伏的商业竞争者，从而对1200亿英镑的光伏行业产生影响。这些新材料也可以产生更广泛的影响，例如，作为清洁太阳能燃料生产或生物传感器的廉价但有效的材料。这个项目为实现这些令人兴奋的可能性奠定了关键基础，并将使我能够建立一个尖端的计划我的团队。

项目成果

Improved photocatalytic activity of TiO2 nanoparticles through nitrogen and phosphorus co-doped carbon quantum dots: an experimental and theoretical study.

通过氮磷共掺杂碳量子点提高 TiO2 纳米粒子的光催化活性：实验和理论研究。

• DOI: 10.1039/d2cp01405j
• 发表时间: 2022
• 期刊: PCCP
• 作者: Yashwanth HJ

Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies

• DOI: 10.1063/5.0071763
• 发表时间: 2021-11-29
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Rondiya, Sachin R.;Jagt, Robert A.;Hoye, Robert L. Z.
• 通讯作者: Hoye, Robert L. Z.

The defect challenge of wide-bandgap semiconductors for photovoltaics and beyond.

• DOI: 10.1038/s41467-022-32131-4
• 发表时间: 2022-08-11
• 期刊: Nature communications
• 影响因子: 16.6

Elucidating the Factors Limiting the Photovoltaic Performance of Mixed Sb-Bi Halide Elpasolite Absorbers

阐明限制混合锑铋卤化物钾冰晶石吸收器光伏性能的因素

• DOI: 10.1002/solr.202200749
• 发表时间: 2022
• 期刊: Solar RRL
• 影响因子: 7.9
• 作者: Li Z

Layered BiOI single crystals capable of detecting low dose rates of X-rays.

• DOI: 10.1038/s41467-023-38008-4
• 发表时间: 2023-04-28
• 期刊: NATURE COMMUNICATIONS
• 影响因子: 16.6
• 作者: Jagt, Robert A.;Bravic, Ivona;Eyre, Lissa;Galkowski, Krzysztof;Borowiec, Joanna;Dudipala, Kavya Reddy;Baranowski, Michal;Dyksik, Mateusz;Van de Goor, Tim W. J.;Kreouzis, Theo;Xiao, Ming;Bevan, Adrian;Plochocka, Paulina;Stranks, Samuel D.;Deschler, Felix;Monserrat, Bartomeu;MacManus-Driscoll, Judith L.;Hoye, Robert L. Z.
• 通讯作者: Hoye, Robert L. Z.