QD transistors and matrix arrays for wafer scale integration

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Solution processed colloidal semiconductor quantum dots offer a high potential for decreasing costs and expanding versatility of many electronic and optoelectronic devices. Initially used as a research tool to study charge carrier mobilities in closely packed quantum dot thin films, field effect transistors (FET) with quantum dots as the active layer have recently experienced a breakthrough in performance (achievement of mobilities higher than 100 cm2 V-1 s-1) as a result of a proper choice of surface ligands and/or improved chemical treatment of the nanoparticle films during device processing. CdSe and PbS QDs have shown remarkable mobilities in FETs, but it is essential to get away from toxic elements such as Cd and Pb, and obtain a good mobility performance before these versatile and solution-processed FETs can be well-integrated into wafer scale active device technologies. In this CDT project, there will be three objectives: 1) Developing QD FETs based on III-V or II-VI compound semiconductors (InP, GaP, AlP, InSb, CuInSe2). 2) Investigating materials processing, device design and operation parameters for high performance wafer-scale FET matrix fabrication and integration. 3) Understanding electric-field induced charge transport dynamics using ultrafast spectroscopy.