CDT Compound Semiconductor Physics (PhD Progression 1+3)

CDT 化合物半导体物理（博士进修 1 3）

• 批准号: 2882398
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2882398
• 关键词: CDT; Compound; Semiconductor; Physics; PhD

Following recent advances made by the Cardiff-UCL team in the design, growth and fabrication of so called co-doped quantum dot lasers we see an opportunity to develop a world record breaking operating temperature for a QD laser. Laser diodes are used for a variety of light source applications in sensing and communications and operating at high temperature and in a manner where the threshold current is independent of temperature is particularly valuable as it significantly reduces the complexity of the control electronics. We have access to advanced design models to create an active region structure targeted at high and temperature insensitive operation while maintaining a small footprint and applications useable power output. Progress is likely to requires iterations of epitaxial growth and fabrication to optimise performance. Advances in the fabrication of the laser cavity to maximise output in a single direction and to minimise optical loss are likely to be necessary to achieve the very highest temperature.

随着卡迪夫-伦敦大学学院团队在所谓的共掺杂量子点激光器的设计、生长和制造方面取得的最新进展，我们看到了为量子点激光器开发破世界纪录的工作温度的机会。激光二极管用于传感和通信中的各种光源应用，并在高温下工作，并且在阈值电流独立于温度的方式下特别有价值，因为它显着降低了控制电子器件的复杂性。我们可以使用先进的设计模型来创建针对高温不敏感操作的有源区域结构，同时保持小的占地面积和应用程序可用的功率输出。进展可能需要外延生长和制造的迭代来优化性能。为了达到最高的温度，激光腔的制造方面的进步可能是必要的，以便在单一方向上最大化输出并最小化光学损耗。