Stochastic noise characterization and modeling of sub-100nm MOSFETS for low-noise, low-power RF IC applications

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The research program presented in this proposal is to develop a first-rate research and training environment for the investigation of high-frequency (HF) noise in semiconductor transistors, especially for sub-100nm Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), from device characterization to low-noise, radio-frequency (RF) integrated circuit (IC) designs. This program consists of four major research areas - high-frequency noise measurement, device characterization, simulation-oriented noise modeling and low-noise, low-power RF IC design. The emphasis of this research program is primarily on developing (1) advanced measurement techniques for a novel four-port high-frequency noise measurement system, (2) innovative noise characterization methodologies using interval arithmetic, (3) accurate and physics-based four-port device models using stochastic techniques to take care of the impact on the high-frequency noise behavior of a sub-100nm MOSFET from the gate leakage current, the substrate bias and the induced substrate noise, and (4) novel high-frequency circuits for low-voltage, low-noise wireless applications. All efforts will be taken to fully exploit the research results commercially, generate economic benefits and therefore fuel the Canadian economy. Potential users of these research results will include manufacturers associated with the semiconductor manufacturing, microelectronics and telecommunication industries. In addition, the state-of-the-art infrastructure developed in this research program will be used extensively in collaboration with industrial partners, with the objective of empowering them with the competitive edge that is vital to excelling in the present economic scenario. Finally, the proposed research program will create an essential research and training environment that is appropriate to impart requisite skills to highly qualified personnel (HQP) that are in line with the needs of academia or Canadian microelectronics and telecommunication industries in the area of high-frequency device characterization and circuit-level testing. The program and innovative infrastructure will attract talented and experienced researchers and HQP in the world and retain them in Canada.