Stochastic noise characterization and modeling of sub-100nm MOSFETS for low-noise, low-power RF IC applications

本提案提出的研究计划是为半导体晶体管，特别是亚100nm金属氧化物半导体场效应晶体管（mosfet）的高频（HF）噪声的研究开发一个一流的研究和培训环境，从器件表征到低噪声，射频（RF）集成电路（IC）设计。该计划包括四个主要研究领域-高频噪声测量，器件特性，面向仿真的噪声建模和低噪声，低功耗射频集成电路设计。本研究计划的重点主要是开发(1)新型四端口高频噪声测量系统的先进测量技术，(2)使用间隔算法的创新噪声表征方法，(3)使用随机技术精确和基于物理的四端口器件模型，以考虑栅极泄漏电流，衬底偏置和诱导衬底噪声对亚100nm MOSFET高频噪声行为的影响，(4)用于低电压、低噪声无线应用的新型高频电路。将尽一切努力将研究成果充分商业化，产生经济效益，从而为加拿大经济提供动力。这些研究成果的潜在用户将包括与半导体制造、微电子和电信工业有关的制造商。此外，在这个研究项目中开发的最先进的基础设施将广泛用于与工业合作伙伴的合作，目的是赋予他们竞争优势，这对在当前的经济情况下取得优异成绩至关重要。最后，拟议的研究计划将创造一个必要的研究和培训环境，以适当地传授必要的技能给高素质的人才（HQP），这些人才符合学术界或加拿大微电子和电信行业在高频器件特性和电路级测试领域的需求。该项目和创新的基础设施将吸引世界各地有才华和经验丰富的研究人员和HQP，并将他们留在加拿大。

The research program presented in this proposal is to develop a first-rate research and training environment for the investigation of high-frequency (HF) noise in semiconductor transistors, especially for sub-100nm Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), from device characterization to low-noise, radio-frequency (RF) integrated circuit (IC) designs. This program consists of four major research areas - high-frequency noise measurement, device characterization, simulation-oriented noise modeling and low-noise, low-power RF IC design. The emphasis of this research program is primarily on developing (1) advanced measurement techniques for a novel four-port high-frequency noise measurement system, (2) innovative noise characterization methodologies using interval arithmetic, (3) accurate and physics-based four-port device models using stochastic techniques to take care of the impact on the high-frequency noise behavior of a sub-100nm MOSFET from the gate leakage current, the substrate bias and the induced substrate noise, and (4) novel high-frequency circuits for low-voltage, low-noise wireless applications. All efforts will be taken to fully exploit the research results commercially, generate economic benefits and therefore fuel the Canadian economy. Potential users of these research results will include manufacturers associated with the semiconductor manufacturing, microelectronics and telecommunication industries. In addition, the state-of-the-art infrastructure developed in this research program will be used extensively in collaboration with industrial partners, with the objective of empowering them with the competitive edge that is vital to excelling in the present economic scenario. Finally, the proposed research program will create an essential research and training environment that is appropriate to impart requisite skills to highly qualified personnel (HQP) that are in line with the needs of academia or Canadian microelectronics and telecommunication industries in the area of high-frequency device characterization and circuit-level testing. The program and innovative infrastructure will attract talented and experienced researchers and HQP in the world and retain them in Canada.