Stochastic noise characterization and modeling of sub-100nm MOSFETS for low-noise, low-power RF IC applications

该提案中提出的研究计划旨在开发一流的研究和培训环境，用于研究半导体晶体管，特别是亚100 nm金属氧化物半导体场效应晶体管(MOSFET)中的高频噪声，从器件特性到低噪声、射频集成电路(IC)设计。该项目包括四个主要研究领域-高频噪声测量、器件表征、面向仿真的噪声建模和低噪声、低功耗射频IC设计。这项研究计划的重点主要是开发(1)先进的测量技术，用于新型的四端口高频噪声测量系统，(2)创新的噪声表征方法，(2)使用区间算术的创新的噪声表征方法，(3)使用随机技术的精确和基于物理的四端口器件模型，以考虑栅极泄漏电流、衬底偏置和感应衬底噪声对亚100 nm MOSFET高频噪声行为的影响，以及(4)适用于低电压、低噪声无线应用的新型高频电路。将尽一切努力将研究成果充分商业化，产生经济效益，从而推动加拿大经济。这些研究成果的潜在用户将包括与半导体制造、微电子和电信行业相关的制造商。此外，在这项研究计划中开发的最先进的基础设施将与行业合作伙伴广泛使用，目的是增强他们的竞争优势，这对于在当前的经济情况下脱颖而出至关重要。最后，拟议的研究计划将创造一个基本的研究和培训环境，适合向高素质人员(HQP)传授必要的技能，这些技能符合学术界或加拿大微电子和电信行业在高频器件表征和电路级测试领域的需求。该计划和创新的基础设施将吸引世界各地有才华和经验的研究人员和总部，并将他们留在加拿大。

The research program presented in this proposal is to develop a first-rate research and training environment for the investigation of high-frequency (HF) noise in semiconductor transistors, especially for sub-100nm Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), from device characterization to low-noise, radio-frequency (RF) integrated circuit (IC) designs. This program consists of four major research areas - high-frequency noise measurement, device characterization, simulation-oriented noise modeling and low-noise, low-power RF IC design. The emphasis of this research program is primarily on developing (1) advanced measurement techniques for a novel four-port high-frequency noise measurement system, (2) innovative noise characterization methodologies using interval arithmetic, (3) accurate and physics-based four-port device models using stochastic techniques to take care of the impact on the high-frequency noise behavior of a sub-100nm MOSFET from the gate leakage current, the substrate bias and the induced substrate noise, and (4) novel high-frequency circuits for low-voltage, low-noise wireless applications. All efforts will be taken to fully exploit the research results commercially, generate economic benefits and therefore fuel the Canadian economy. Potential users of these research results will include manufacturers associated with the semiconductor manufacturing, microelectronics and telecommunication industries. In addition, the state-of-the-art infrastructure developed in this research program will be used extensively in collaboration with industrial partners, with the objective of empowering them with the competitive edge that is vital to excelling in the present economic scenario. Finally, the proposed research program will create an essential research and training environment that is appropriate to impart requisite skills to highly qualified personnel (HQP) that are in line with the needs of academia or Canadian microelectronics and telecommunication industries in the area of high-frequency device characterization and circuit-level testing. The program and innovative infrastructure will attract talented and experienced researchers and HQP in the world and retain them in Canada.