Stochastic noise characterization and modeling of sub-100nm MOSFETS for low-noise, low-power RF IC applications

适用于低噪声、低功耗 RF IC 应用的 100nm 以下 MOSFET 的随机噪声表征和建模

• 批准号: 261741-2007
• 负责人: Chen, ChihHung
• 金额: $ 1.51万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2011
• 资助国家: 加拿大
• 起止时间: 2011-01-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=479983
• 关键词: Stochastic; noise; characterization; modeling; sub

The research program presented in this proposal is to develop a first-rate research and training environment for the investigation of high-frequency (HF) noise in semiconductor transistors, especially for sub-100nm Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), from device characterization to low-noise, radio-frequency (RF) integrated circuit (IC) designs. This program consists of four major research areas - high-frequency noise measurement, device characterization, simulation-oriented noise modeling and low-noise, low-power RF IC design. The emphasis of this research program is primarily on developing (1) advanced measurement techniques for a novel four-port high-frequency noise measurement system, (2) innovative noise characterization methodologies using interval arithmetic, (3) accurate and physics-based four-port device models using stochastic techniques to take care of the impact on the high-frequency noise behavior of a sub-100nm MOSFET from the gate leakage current, the substrate bias and the induced substrate noise, and (4) novel high-frequency circuits for low-voltage, low-noise wireless applications. All efforts will be taken to fully exploit the research results commercially, generate economic benefits and therefore fuel the Canadian economy. Potential users of these research results will include manufacturers associated with the semiconductor manufacturing, microelectronics and telecommunication industries. In addition, the state-of-the-art infrastructure developed in this research program will be used extensively in collaboration with industrial partners, with the objective of empowering them with the competitive edge that is vital to excelling in the present economic scenario. Finally, the proposed research program will create an essential research and training environment that is appropriate to impart requisite skills to highly qualified personnel (HQP) that are in line with the needs of academia or Canadian microelectronics and telecommunication industries in the area of high-frequency device characterization and circuit-level testing. The program and innovative infrastructure will attract talented and experienced researchers and HQP in the world and retain them in Canada.

本提案中提出的研究计划旨在开发一流的研究和培训环境，用于调查半导体晶体管中的高频（HF）噪声，特别是100 nm以下的金属氧化物半导体场效应晶体管（MOSFET），从器件表征到低噪声，射频（RF）集成电路（IC）设计。该计划包括四个主要研究领域-高频噪声测量，器件表征，面向仿真的噪声建模和低噪声，低功耗RF IC设计。本研究计划的重点主要是开发（1）用于新型四端口高频噪声测量系统的先进测量技术，（2）使用区间运算的创新噪声表征方法，（3）使用随机技术的精确和基于物理的四端口器件模型，以照顾对子器件的高频噪声行为的影响，100 nm MOSFET的栅极漏电流、衬底偏置和衬底噪声;（4）用于低电压、低噪声无线应用的新型高频电路。将尽一切努力充分利用商业研究成果，产生经济效益，从而推动加拿大经济。这些研究成果的潜在用户将包括与半导体制造、微电子和电信行业有关的制造商。此外，该研究计划中开发的最先进的基础设施将与工业合作伙伴合作广泛使用，目的是使他们具有竞争优势，这对在当前经济形势下脱颖而出至关重要。最后，拟议的研究计划将创建一个必要的研究和培训环境，适合传授必要的技能，高素质的人员（HQP），符合学术界或加拿大微电子和电信行业在高频器件表征和电路级测试领域的需求。该计划和创新的基础设施将吸引世界上有才华和经验的研究人员和HQP，并将他们留在加拿大。