Semiconductors for large area electron device applications: materials issues and devices implications

用于大面积电子器件应用的半导体：材料问题和器件影响

• 批准号: 217340-2007
• 负责人: OLeary, Stephen
• 金额: $ 1.77万
• 依托单位: University of British Columbia
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2011
• 资助国家: 加拿大
• 起止时间: 2011-01-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=477994
• 关键词: Semiconductors; large; area; electron; device

Since the dawn of the electronics era, progress in electronics has primarily been achieved through a reduction in device dimensions. There is, however, a certain class of electronic device that requires size in order to be useful. Displays, scanners, solar cells, and x-ray image detectors are all examples of large area electronic devices. While in conventional electronics the emphasis may be presently on sub-micron device features, in large area electronics the focus instead is on electronic devices fabricated over substrates with dimensions of the order of a square meter. As crystalline silicon cannot be uniformly and inexpensively deposited over large areas, alternate electronic materials must be employed instead for large area electronic device applications. Amorphous and polycrystalline (disordered) semiconductors, such as hydrogenated amorphous silicon, have emerged as the active electronic materials of choice for many such applications.

自电子时代开始以来，电子技术的进步主要是通过减小器件尺寸来实现的。然而，有一类电子设备需要尺寸才能有用。显示器、扫描仪、太阳能电池和X射线图像检测器都是大面积电子设备的示例。虽然在常规电子器件中，目前的重点可能是亚微米器件特征，但在大面积电子器件中，重点反而是在具有平方米量级尺寸的衬底上制造的电子器件。由于晶体硅不能均匀且廉价地沉积在大面积上，因此必须采用替代的电子材料来替代大面积电子器件应用。非晶和多晶（无序）半导体，如氢化非晶硅，已成为许多此类应用的选择的有源电子材料。