Novel main group and transition metal precursors for atomic layer and chemical vapor deposition

用于原子层和化学气相沉积的新型主族和过渡金属前体

• 批准号: 445964-2012
• 负责人: Song, Datong
• 金额: $ 10.9万
• 依托单位: University of Toronto
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2015
• 资助国家: 加拿大
• 起止时间: 2015-01-01 至 2016-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=575095
• 关键词: Novel; main; group; transition; metal

As the conventional silica-based dielectric material cannot satisfy the requirement of modern microelectronics, several transition metal oxides with superior properties have been identified as the next generation dielectric materials for microelectronics. One aspect of this research proposal is concerned with the development of new precursors and processes for deposition of thin films of transition metal oxides used in microelectronics and semiconductor fabrication. The second aspect of this research is aimed to develop new (Group III/V and hybrid) molecular precursors and processes for the production of semiconductors that can be used in optoelectronics.

传统的硅基介电材料已不能满足现代微电子技术的要求，具有上级性能的几种过渡金属氧化物被认为是下一代微电子介质材料。本研究计划的一个方面是开发用于微电子和半导体制造的过渡金属氧化物薄膜沉积的新前体和工艺。本研究的第二个方面旨在开发新的（III/V族和混合）分子前体和生产可用于光电子学的半导体的工艺。