Isotopically Controlled Semiconductor Nanowires and Nanomembranes

同位素控制的半导体纳米线和纳米膜

基本信息

  • 批准号:
    421837-2012
  • 负责人:
  • 金额:
    $ 2.33万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Discovery Grants Program - Individual
  • 财政年份:
    2016
  • 资助国家:
    加拿大
  • 起止时间:
    2016-01-01 至 2017-12-31
  • 项目状态:
    已结题

项目摘要

Semiconductor nanowires and nanomembranes are versatile nanomaterials, which have sparked a surge of interest as building blocks for intelligent electronic, photonic, optoelectronic, thermoelectric, and photovoltaic systems. To exploit these potentialities, extensive efforts have been deployed to understand and manipulate their physical and chemical properties. Here, we propose to introduce an additional complexity to study these nanoscale semiconductor systems and to control some of their basic properties by using enriched stable isotopes. Several physical properties of bulk semiconductors can be significantly influenced by controlling the relative proportions and spatial distributions of their stable isotopes. Exploring these isotope effects in nanowires and nanomembranes creates a wealth of opportunities to highlight subtle but important phenomena and atomic processes. In this research, we will primarily focus on silicon, which has three stable isotopes 28Si, 29Si, and 30Si. Our objectives are: (i) to probe and control phonon and heat transport in silicon nanowires and nanomembranes; and (ii) to investigate mass transport and atomic mixing in metal-catalyzed epitaxial nanowires. We expect the information obtained from this first-of-a-kind research to be extremely valuable for the important fields of semiconductors by creating a unique platform to explore the origin of important size-related properties and design a variety of novel devices. Particularly, this research will provide insights into the physical mechanisms of atomic mixing at nanoscale interfaces as well as into phonon properties and thermal conductance in nanomaterials. These aspects are of compelling importance to understand the basics of the emerging nanowire- and nanomembrane-based nanotechnologies. Training of highly qualified personnel is an integral part of our research program as students involved in this research will acquire an in-depth knowledge of epitaxial growth, nanofabrication, and advanced nanoscale characterization techniques. This provides them with outlets for greater responsibility, creativity, and self-direction and prepares them perfectly for R&D careers in Canadian universities, national laboratories, and industries.
半导体纳米线和纳米膜是多用途的纳米材料,其作为智能电子、光子、光电、热电和光伏系统的构建块引起了人们的极大兴趣。为了利用这些潜力,人们已经做出了广泛的努力来理解和操纵它们的物理和化学性质。在这里,我们建议引入额外的复杂性来研究这些纳米级半导体系统,并通过使用富集的稳定同位素来控制它们的一些基本性质。通过控制稳定同位素的相对比例和空间分布,可以显著影响体半导体的几种物理性质。探索纳米线和纳米膜中的这些同位素效应为突出微妙但重要的现象和原子过程创造了大量机会。在这项研究中,我们将主要关注硅,它有三个稳定的同位素28 Si,29 Si和30 Si。我们的目标是:(i)探测和控制硅纳米线和纳米膜中的声子和热传输;以及(ii)研究金属催化的外延纳米线中的质量传输和原子混合。我们希望从这项首次研究中获得的信息对于半导体的重要领域来说是非常有价值的,通过创建一个独特的平台来探索重要的尺寸相关特性的起源并设计各种新颖的器件。特别是,这项研究将提供深入了解纳米界面原子混合的物理机制,以及纳米材料中的声子性质和热导。这些方面对于理解新兴的基于纳米线和纳米膜的纳米技术的基础知识具有非常重要的意义。高素质人才的培训是我们的研究计划的一个组成部分,因为参与这项研究的学生将获得外延生长,纳米纤维和先进的纳米表征技术的深入了解。这为他们提供了更大的责任感,创造力和自我指导的出口,并为他们在加拿大大学,国家实验室和行业的研发职业做好了充分的准备。

项目成果

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Moutanabbir, Oussama其他文献

Growth and Luminescence of Polytypic InP on Epitaxial Graphene
  • DOI:
    10.1002/adfm.201705592
  • 发表时间:
    2018-02-21
  • 期刊:
  • 影响因子:
    19
  • 作者:
    Mukherjee, Samik;Nateghi, Nima;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature
  • DOI:
    10.1021/nn1030274
  • 发表时间:
    2011-02-01
  • 期刊:
  • 影响因子:
    17.1
  • 作者:
    Moutanabbir, Oussama;Senz, Stephan;Horn-von Hoegen, Michael
  • 通讯作者:
    Horn-von Hoegen, Michael
Indirect-to-direct band gap transition in relaxed and strained Ge1-x-ySixSny ternary alloys
  • DOI:
    10.1063/1.4889926
  • 发表时间:
    2014-08-14
  • 期刊:
  • 影响因子:
    3.2
  • 作者:
    Attiaoui, Anis;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn
  • DOI:
    10.1021/acs.cgd.0c00270
  • 发表时间:
    2020-05-06
  • 期刊:
  • 影响因子:
    3.8
  • 作者:
    Nicolas, Jerome;Assali, Simone;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
  • DOI:
    10.1021/acsphotonics.1c01728
  • 发表时间:
    2022-03-16
  • 期刊:
  • 影响因子:
    7
  • 作者:
    Luo, Lu;Assali, Simone;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama

Moutanabbir, Oussama的其他文献

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{{ truncateString('Moutanabbir, Oussama', 18)}}的其他基金

Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2022
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2022
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Discovery Grants Program - Individual
Nanoscale And Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2021
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2021
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Discovery Grants Program - Individual
Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2020
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2020
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Discovery Grants Program - Individual
Scalable group V two-dimensional materials for mid-infrared optoelectronics
用于中红外光电的可扩展V族二维材料
  • 批准号:
    506700-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Strategic Projects - Group
Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2019
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Canada Research Chairs
Monolithic multi-junction III-V solar cells with optimal 1 eV subcell
具有最佳 1 eV 子电池的单片多结 III-V 太阳能电池
  • 批准号:
    506727-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Strategic Projects - Group
Mid-infrared integrated optoelectronics on silicon
硅基中红外集成光电器件
  • 批准号:
    508856-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 2.33万
  • 项目类别:
    Collaborative Research and Development Grants

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NSF-NSERC:使用横向耦合半导体量子点构建两个量子位控制的相位门
  • 批准号:
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  • 财政年份:
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Exciton-plasmon states in nano-morphologically controlled semiconductor nanowires: From weak coupling to quantum entanglement
纳米形态控制的半导体纳米线中的激子-等离子体激元态:从弱耦合到量子纠缠
  • 批准号:
    2004768
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SBIR 第二阶段:具有受控微观特征的化学机械平坦化垫,适用于 7 纳米以下半导体技术
  • 批准号:
    1951211
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使用自旋控制半导体激光器的矢量调制技术的开发
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SBIR 第一阶段:具有受控微观特征的化学机械平坦化垫,适用于 7 纳米以下半导体技术
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定制有机半导体微腔中的激子-光子相互作用:从共振控制光物理到自发相干
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