Process development for the fabrication of terahertz transmitter and receiver photoconductive antennas.
太赫兹发射器和接收器光电导天线制造的工艺开发。
基本信息
- 批准号:501093-2016
- 负责人:
- 金额:$ 17.48万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Collaborative Research and Development Grants
- 财政年份:2017
- 资助国家:加拿大
- 起止时间:2017-01-01 至 2018-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Terahertz (THz) electromagnetic waves have frequencies of order 10^12 Hz and wavelengths in the range of 100 micrometers. Terahertz spectroscopy for material imaging/sensing and characterization has received a great deal of attention over the past decade. It has been shown that many materials including organic materials, explosives, pharmaceutical compounds and biological agents have distinct signatures in the terahertz frequencies. Consequently, THz technology has many potential applications in areas such as pharmaceutical industry, food industry, organic light emitters manufacturing, security, aerospace, oil industry, medical imaging, medicine, as well as ultra-high-data-rate wireless communications. The distinct characteristics of THz radiation, along with recent advances in the enabling technologies behind, have created the opportunity for the terahertz technology to provide unique solutions to many critical industrial problems. TeTechS Inc. (www.tetechs.com) is a terahertz technology solution company committed to developing terahertz sensor and imaging systems for industrial and scientific applications. TeTechS Inc. is currently offering a variety of leading-edge terahertz products ranging from photo-conductive antenna chips to terahertz spectroscopy systems, to industry and academic customers worldwide. The current project aims to fabricate next generation photo-conductive antenna (PCA) transmitter and receiver chips. The innovative device design along with new highly advanced nano-scale material structures will offer considerably improved device performance: faster response time, greatly enhanced sensitivity and easy deployment in the field of application thanks to compatibility with telecom fiber-optic cables.
太赫兹(THz)电磁波具有1012 Hz量级的频率和100微米范围内的波长。在过去的十年中,太赫兹光谱用于材料成像/传感和表征已经受到了极大的关注。许多材料,包括有机材料、爆炸物、药物化合物和生物制剂,在太赫兹频率上都有不同的特征。因此,太赫兹技术在制药工业、食品工业、有机发光体制造、安全、航空航天、石油工业、医学成像、医学以及超高数据速率无线通信等领域具有许多潜在的应用。太赫兹辐射的独特特性,沿着背后的使能技术的最新进展,为太赫兹技术提供了机会,为许多关键的工业问题提供了独特的解决方案。TeTechS Inc.(www.tetechs.com)是一家太赫兹技术解决方案公司,致力于为工业和科学应用开发太赫兹传感器和成像系统。TeTechS Inc.目前为全球的工业和学术客户提供各种领先的太赫兹产品,从光电导天线芯片到太赫兹光谱系统。当前项目的目标是制造下一代光电导天线(PCA)发射器和接收器芯片。创新的器件设计沿着新型高度先进的纳米级材料结构,将大大提高器件性能:更快的响应时间、大大增强的灵敏度以及与电信光纤电缆的兼容性,使其在应用领域易于部署。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Wasilewski, Zbigniew其他文献
Fabrication of grating coupled GaAs/AlGaAs quantum well infrared photodetector on an Si substrate
- DOI:
10.1116/1.5088967 - 发表时间:
2019-05-01 - 期刊:
- 影响因子:1.4
- 作者:
Kim, HoSung;Ahn, Seung-Yeop;Wasilewski, Zbigniew - 通讯作者:
Wasilewski, Zbigniew
Wasilewski, Zbigniew的其他文献
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{{ truncateString('Wasilewski, Zbigniew', 18)}}的其他基金
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
RGPIN-2018-05345 - 财政年份:2022
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
RGPIN-2018-05345 - 财政年份:2021
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
RGPIN-2018-05345 - 财政年份:2020
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
RGPIN-2018-05345 - 财政年份:2019
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
RGPIN-2018-05345 - 财政年份:2018
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
436213-2013 - 财政年份:2017
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
436213-2013 - 财政年份:2016
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
436213-2013 - 财政年份:2015
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
Electrochemical Capacitance Voltage Profiler for MBE-grown novel quantum optoelectronic devices
用于 MBE 生长的新型量子光电器件的电化学电容电压分析仪
- 批准号:
RTI-2016-00068 - 财政年份:2015
- 资助金额:
$ 17.48万 - 项目类别:
Research Tools and Instruments
AIIIBV Molecular Beam Epitaxial structures and devices for photonics, nanoelectronics, spintronics and quantum computing.
AIIIBV 用于光子学、纳米电子学、自旋电子学和量子计算的分子束外延结构和器件。
- 批准号:
436213-2013 - 财政年份:2014
- 资助金额:
$ 17.48万 - 项目类别:
Discovery Grants Program - Individual
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