Ultra high quality transition metal dichalcogenide synthesis by molecular beam epitaxy for integrated light emitting diodes and ion sensitive transistors

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2-D materials are a new class of materials that exist as atomic monolayers, and which possess a wide range of useful physical properties. While graphene is the most well known of the 2-D materials, it is a conductor that is unsuitable for electronics, spurring a decade of research into the development of semiconducting 2-D materials. The transition metal dichalcogenides (TMDCs) and boron nitride (BN) are 2-D semiconductors, which can be fashioned into useful devices such as light emitting diodes and transistors. A grand challenge for the adoption of TMDCs and BN in the application areas of photonics and solid state sensing however, is the development of a manufacturing process for high quality material. We propose here to directly address this advanced manufacturing challenge at the intersection of nanotechnology and quantum materials. We will use molecular beam epitaxy (MBE) to develop a scalable manufacturing approach for ultra high quality 2-D materials, with the end goal of demonstrating: A) 1.3-1.65µm light emitting diodes suitable for telecommunications applications and B) ion sensing field effect transistors suitable for genome sequencing. The highest quality conventional semiconductor structures are grown by MBE, and we aim to harness the superior quality of MBE growth to address the manufacturing challenge faced by industry in adopting 2-D materials. Our team is composed of world reknown experts in MBE growth (Z. Mi), atomic resolution material analysis (G. Botton), and 2-D materials (T. Szkopek). We are partnered with CIS Scientific Inc., leading experts in chalcogenide based materials for electronics and optoelectronics. We are also partnered with NanoAcademic Technologies, leading experts in nanoscale device modelling, essential to the engineering optimization of device structures. This work will enable the development of a scalable manufacturing process for 2-D semiconductors, will train highly qualified personnel in next generation semiconductors, and will provide our Canadian corporate partners with economic opportunities that can be realized from an international leadership position in 2-D materials development.