Graphene on silicon technology for next generation microwave circuits

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Graphene is readily available and easy to manufacture but cumbersome transfer processes, high integration and**lower costs are still challenging. Kennedy Labs is moving process technology developed at Cornell Nanofabrication**Facility in Ithaca NY to the Center for Emerging Device Technologies (CEDT) at McMaster in Hamilton, to develop**graphene on silicon substrates to address the issue of high integration. Silicon technologies are still expected to**remain the workhorse for electronic applications and hence the business case for high production of graphene in**SOI CMOS. The irreplaceable high electron mobility of graphene promises to deliver high performance transistors**capable of operation at GHz frequencies. By reducing the resistance between graphene and engineered metal**contacts, mobilities as high as 940 mS/m have been recorded but processing is not trivial, and the proposed work**aims at producing high quality microwave transistors for the implementation of robust electro-optical drivers.