A Double Crystal X-Ray Diffractometer System

这笔拨款用于部分购买x射线衍射仪系统，以帮助密歇根大学III-V半导体材料研究工作。固体电子实验室目前配备了Riber 2300分子束外延（MBE）系统，用于III-V型半导体材料的生长。通过光致发光、霍尔效应测量和深能级瞬态光谱对外延材料进行了表征。目前许多研究都是针对由不同晶格常数的材料组成的异质结形成的应变层的生长和表征。x射线衍射仪系统是测量晶格常数和表征不匹配系统中存在的应变的宝贵工具。

This grant is for partial purchase support of an X-Ray Diffractometer System to aid the III-V semiconductor materials research effort at the University of Michigan. The Solid State Electronics Laboratory is presently equipped with a Riber 2300 Molecular Beam Epitaxy (MBE) System used for the growth of III-V semiconductor materials. The epitaxial materials are characterized by photoluminescence, Hall Effect Measurements, and Deep Level Transient Spectroscopy. Currently much research is aimed at the growth and characterization of strained layers formed from heterojunctins composed of materials of different lattice constants. An X-ray Diffractometer System is an invaluable tool in measuring lattice constants and characterizing strains present in mismatched systems.