GOALI: Realizing the Promise of III-N-Epitaxy Enabled by III-N Substrates

目标：实现 III-N 衬底实现的 III-N 外延的承诺

• 批准号: 1202132
• 负责人: April Brown
• 金额: $ 44万
• 依托单位: Duke University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-07-01 至 2015-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1202132&HistoricalAwards=false
• 关键词: GOALI; Realizing; Promise; III; Epitaxy

The objective of this collaborative program, partnering Duke University and Kyma Technologies, Inc., is to further the fundamental understanding and related process and manufacturing practice of the nucleation and subsequent epitaxial growth of III-N device structures on native III-N substrates and templates. The focus is on assessing the root causes of current limitations in materials quality and manufacturing yield and cost of III-N devices which will, in turn, serve to help develop and implement sound engineering strategies for more robust, high yield processes. The III-N device market is expected to reach $100B or more over the long term driven primarily by energy-efficient solid-state lighting and power electronics.The intellectual merit of the research derives from determining which physical, chemical, and morphological characteristics of III-N substrates dominate nucleation processes thereby establishing thin-film microstructure determining device-critical electronic and optical properties. The metrics for substrate properties, in addition to the epitaxial growth processes and film structures for creating device-quality substrate-epitaxial layer interfaces and buffer layers, will be articulated.The broader impacts of this project are both the strong social and environmental impacts of the realization of safe and energy-efficient light emitters and electronic devices, as well as enhancing the semiconductor device and materials workforce through the collaborative engagement of engineering students, industry scientists/engineers, and faculty. A new forum, POISE (PhD Opportunities in Small-Business Enterprises) will be created with the aim of preparing, transitioning, and retaining PhD students in industry.

这项合作计划的目标是与杜克大学和Kyma技术公司合作，进一步的基本理解和相关的工艺和制造实践的native III-N衬底和模板上的III-N器件结构的成核和后续外延生长。重点是评估当前III-N器件的材料质量和制造产量和成本限制的根本原因，这反过来将有助于开发和实施更强大，高产工艺的合理工程策略。III-N器件市场预计将达到1000亿美元或更多的长期驱动主要是由节能固态照明和电力电子。该研究的智力价值来自于确定III-N衬底的哪些物理，化学和形态特征主导成核过程，从而建立薄膜微结构，确定器件关键的电子和光学特性。除了外延生长工艺和薄膜结构之外，还将阐述衬底特性的指标，以创建器件质量的衬底-外延层界面和缓冲层。该项目的更广泛影响是实现安全和节能的光发射器和电子器件的强烈社会和环境影响，以及通过工程专业学生、行业科学家/工程师和教职员工的合作参与来增强半导体器件和材料劳动力。一个新的论坛，POISE（小企业的博士机会）将被创建，目的是准备，过渡和保留博士生在行业。