Advanced Semiconductor Structures for Next Generation Wireless Systems: Interplay Between Materials and Devices

用于下一代无线系统的先进半导体结构：材料和设备之间的相互作用

• 批准号: 9633535
• 负责人: April Brown
• 金额: $ 37万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-08-01 至 1999-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9633535&HistoricalAwards=false
• 关键词: Advanced; Semiconductor; Structures; Next; Generation

9633535 Brown In this proposal program, The Georgia Institute of Technology (Georgia Tech), The University of Illinois (UIUC), and TRW will collaborate to significantly advance the growth and fabrication technologies for phosphorous-based microwave and millimeter wave devices. The framework for this effort is provided by the current system drivers for improvements in wireless communication systems. These criteria are reduced process cost, improved efficiency, linearity and output power, minimization of bias voltage and current drain, and reduced noise. Molecular Beam Epitaxy (MBE) is the most widely used growth technique for commercial microwave and millimeter wave devices which require epitaxial films. It is widely recognized that InP-based materials offer significant advantages for these targeted device applications. Significant improvements, however, are currently required to advance these materials to an adequate state of maturity for manufacturing. The ability to utilize phosphorus in a "standard' MBE configuration, i.e. all solid sources, will enable specific performance and process cost improvements. We propose to address this vital need. Concurrent with this goal will be the advancement of MBE as a process technology. We will address both of these issues by performing the materials experiments in conjunction with the development of a physically-based MBE model. The effort at The University of Illinois will be focused towards the development of improved process technologies for InP-based HEMTs. In particular, the improvement in dry etching uniformity and the development of improved device structures and schemes for ohmic contacts will be investigated. The process issues chosen will enable improvements in process cost and in device performance. Materials characterization and device fabrication and measurement will be performed at TRW. TRW has committed a significant effort (- 60% cost sharing) towards this collaborative project. In addition, TRW will provide summer e mployment for students working on this project. ***

9633535布朗在这项提议计划中，佐治亚理工学院(佐治亚理工学院)、伊利诺伊大学(UIUC)和TRW将合作，显著推进磷基微波和毫米波器件的生长和制造技术。这项工作的框架由用于改进无线通信系统的当前系统驱动程序提供。这些标准包括降低工艺成本、提高效率、线性度和输出功率、最小化偏置电压和电流消耗以及降低噪声。分子束外延(MBE)是商业微波和毫米波器件中应用最广泛的生长技术，需要外延薄膜。人们普遍认为，基于InP的材料为这些目标器件应用提供了显著的优势。然而，目前需要对这些材料进行重大改进，以使其达到足够的制造成熟度。在“标准”MBE配置中利用磷的能力，即全固体源，将使特定的性能和工艺成本得到改善。我们建议解决这一至关重要的需求。与这一目标同时实现的还有作为一种工艺技术的MBE的进步。我们将通过执行材料实验和开发基于物理的MBE模型来解决这两个问题。伊利诺伊大学的努力将集中在为基于InP的HEMT开发改进的工艺技术。特别是，干法刻蚀均匀性的改善和欧姆接触的改进器件结构和方案的开发将被研究。所选择的工艺问题将使工艺成本和设备性能得到改善。材料表征以及器件制造和测量将在TRW进行。TRW为这一合作项目做出了重大努力(-60%的成本分担)。此外，TRW将为从事该项目的学生提供暑期就业机会。***