U.S.-China Cooperative Research: Improvement of Amorphous Silicon Semiconductors

芝加哥大学的Hellmut Fritzsche和中国科学院上海硅酸盐研究所的陈居光在改进非晶硅半导体方面进行了为期两年的合作研究，目的是阐明非晶硅的微观结构与电子性能之间的关系。更好地理解这种非晶半导体多层膜的表面和界面，并测量微观迁移率随温度、掺杂和制备条件的变化。这是1982年美中项目合作研究补助金的延续。该项目解决了当前非晶材料研究的前沿问题。非晶硅是一种很有前途的固态器件材料。更好地了解这些材料有望提高半导体的质量和可重复性，这对大面积太阳能电池和许多电子和光学器件都很有用。芝加哥和上海研究组在半导体物理和材料制备及表征方面的综合专长将促进美中合作科学项目通过国际合作研究推进科学知识的目标。

The objectives of this two-year cooperative research project on the improvement of amorphous silicon semiconductors between Hellmut Fritzsche of the University of Chicago and Chen Jukuang of the Shanghai Institute of Ceramics, Chinese Academy of Sciences are to elucidate the correlation between the microstructure and the electronic properties of amorphous silicon, arrive at a better understanding of surface and interfaces of this amorphous semiconductor multilayers and measure microscopic mobility as a function of temperature, doping and preparation conditions. This is a continuation of a 1982 U.S.-China Program cooperative research grant. This project addresses problems at the forefront of current research on amorphous crystalline materials. Amorphous silicon is a promising material for many solid state devices. A better understanding of these materials is expected to improve the quality and reproducibility of semiconductors which are useful for large area solar cells and numerous electronic and optical devices. The Chicago and Shanghai groups' combined expertise on semiconductor physics and materials preparation and characterization will promote the U.S.-China Cooperative Science Program's objective of advancing scientific knowledge through international collaborative research.