EIA: Rapid Thermal Vapor Phase Epitaxy

本项目的目的是证明标准的气相外延生长技术可以扩展到时间/温度范围，以制造具有突变和/或准突变界面的亚100A层，缺陷更少，成本比分子束外延低得多。由于硅VPE的高生长速率，硅分子束外延的困难，以及缺乏任何替代生长技术，本研究将使用硅作为材料。使用直流电弧灯和闪光灯，可以在气流中快速加热晶片。冷却将通过与“冷”板直接接触来完成。将探索两种生长化学：硅烷的热解可以在接近800℃的温度下非常突然地形成结，以及还原氯硅烷以获得最高质量的材料和潜在的完全选择性生长。将对薄膜进行化学、电学和显微镜表征。作为材料质量的最终证明，晶体管将被制造和表征，并关注弹道双极器件。

The objective of this project is to demonstrate that standard vapor phase epitaxial growth techniques can be extended into time/temperature regimes to allow fabrication of sub 100 A layers with abrupt and/or quasi abrupt interfaces, with fewer defects and at much lower cost than with MBE. The material to be used for this study will be silicon, due to the high growth rates of silicon VPE, the difficulty of silicon MBE, and the lack of any alternate growth technique. Wafers will be heated rapidly while in a gas flow using DC arc and flash lamps. Cooling will be done using direct contact with a "cool" plate. Two growth chemistries will be explored: pyrolysis of silane which can be done at temperatures close to 800 C for very abrupt junction formation, and reduction of chlorosilanes for the highest quality material and potentially, completely selective growth. Films will be characterized chemically, electrically, and microscopically. As final proof of material quality transistors will be fabricated and characterized with attention being paid to a ballistic bipolar device.