Transient Electrical and Optical Behavior of High Resistivity Semiconductors (Materials Research)

这是一个研究规划补助金的研究 妇女机会方案。 建议的目标 研究是利用光电霍尔效应分析和电场 分析技术来研究时间，温度和场， 高电阻率输运相关性 半导体 预计这一分析将提供更多 对这些物质中的运输行为的基本理解 材料，并允许空间电荷弛豫的影响， 持久的光电导性和深能级捕获， 杰出的 这项工作将促进正确分析高 电阻率材料半导体，并将提供 实验数据可以与现有的理论数据进行比较。 预测。 电接触的重要意义， 这些高电阻率的超导体是可以预期的， 电荷效应总是存在于近接触区中。

This is a Research Planning Grant in the Research Opportunities for Women Program. The objective of the proposed research is to use photo-hall effect analysis and electric field profiling techniques to study the time-, temperature-, and field- dependence of transport in high electrical resistivity semiconductors. This analysis is expected to provide a more fundamental understanding of transport behavior in these materials, and allow the effects of space charge relaxation, persistent photoconductivity, and deep level trapping to be distinguished. This work will advance the effort to properly analyze high resistivity material semiconductors, and will provide experimental data that can be compared to existing theoretical predictions. Important implications for electrical contacts to these high resistivity semicondctors can be expected, since space charge effects are always present in the near contact region.