ROW: (Career) - Slow-Wave Characteristics of Modulation- Doped A1GaAs/GaAs Heterostructures

这是一项为期一年的前导性研究，旨在研究调制掺杂AlGaAs/GaAs异质结的慢波特性。本项目的目的是在实验上确定在微波/毫米波范围内利用AlGaAs/GaAs肖特基势垒作为移相器、衰减器和开关的可行性。与前景广阔的调制掺杂场效应晶体管技术相结合，兼容的有源和无源元件的集成对微波/毫米波单片集成电路的发展具有重要意义。采用OMCVD方法生长出高质量的AlGaAs/GaAs异质结，并用电学和光学方法进行表征。为了进行初步研究，我们将制作微带和共面波导结构的慢波器件。直流和微波测量将在尽可能宽的范围内利用频率特性进行。这些结果将为今后利用异质结构材料设计慢波器件提供依据。

This is a one-year pilot study to investigate the slow-wave characteristics of modulated-doped A1GaAs/GaAs heterostructures. The objective of this project is to experimentally determine the feasibility of utilizing A1GaAs/GaAs Schottky barriers as phase shifters, attenuator, and switches in the microwave/millimeter wave regime. Combined with the promising modulation-doped field-effect transistor technology, integration of compatible active and passive elements is of great significance in the development of microwave/millimeter wave monolithic integrated circuits. High quality A1GaAs/GaAs heterostructure will be grown by OMCVD and characterized by electrical and optical methods. Slow-wave devices in microstrip and coplanar waveguide configurations will be fabricated for preliminary studies. DC and microwave measurements will be made with frequency characteristics over as broad a range as possible. These results will provide a basis for future design of slow-wave devices using heterostructure materials.