RUI:EIA: Study of Halogen Lamp Rapid Thermal Annealing on Implanted InP and InGaAs

为了在这些材料中获得高质量的n型和p型层，将对Si和be注入的InP和InGaAs进行详细的卤素灯快速热退火研究。除了单次植入外，还将使用一些多次植入计划来适应特定的设备要求。植入材料将采用一步和两步退火循环。通过扫描电子显微镜、霍尔显微镜、透射电子显微镜、卢瑟福背散射、光致发光和深能级瞬态光谱测量，将对植入层的表面形貌、掺杂激活、载流子迁移率、掺杂谱、缺陷密度和能级进行评估。将卤素灯快速退火的结果与传统炉退火的结果进行比较。将研究用H、N、B和Be离子轰击p型InGaAs，以获得近本征、高电阻层和高速光导探测器。研究高阻层在不同卤素灯退火温度下的片层电阻变化，找出高阻消失的卤素灯加工临界温度。此外，电流电压、光谱响应、光脉冲响应和噪声功率的测量也将在光导探测器上进行。本研究结果将有助于利用离子注入技术制造高性能器件。

A detailed halogen-lamp rapid thermal annealing study will be performed on Si- and Be- implanted InP and InGaAs to obtain high quality n- and p-type layers in these materials. In addition to single implants, some multiple implant schedules will be used to suit particular device requirements. One-and two-step annealing cycles will be used on the implanted material. The surface morphology, dopant activation, carrier mobility, doping profiles, defect density, and energy levels of the implanted layers will be evaluated by performing scanning electron microscopy, Hall, transmission electron microscopy, Rutherford back scattering, photoluminescence, and deep level transient spectroscopy measurements. The results of the halogen-lamp rapid thermal annealing will be compared with those obtained from conventional furnace annealing. Light-ion bombardment using H, N, B, and Be ions into p-type InGaAs will be studied to obtain near-intrinsic, high-resistance layers and high-speed photoconductive detectors. The variation of the sheet resistance of the high-resistance layers with different 20 s halogen-lamp annealing temperatures will be studied to find the critical halogen-lamp processing temperature above which high resistance disappears. Also current -voltage, spectral response, optical impulse response, and noise power measurements will be performed on the photoconductive detectors. The results of this study will be useful to make high-performance devices using ion-implantation technology.