Mechanisms and Kinetics of Elementary Reactions on Semiconductor Surfaces

这个项目是在一般地区的分析和表面 化学和半导体表面领域 化学. 该研究计划将调查 选择的氢化物和烷基金属分子与 硅和砷化镓的单晶表面。 的 目标是深入了解表面反应模式 对于这类技术上重要的系统， 获得元素动力学的定量数据 反应. 该研究解决了一些基本问题， 与生产具有重要技术意义的 化合物半导体如砷化镓。 半导体表面化学是一个重要的领域， 科学和技术的观点。 然而，基本 在半导体表面上发生的化学反应的信息， 严重缺乏。 这项研究的结果将非常 有用的.

This project is in the general area of analytical and surface chemistry and in the subfield of semiconductor surface chemistry. This research program will investigate the reactivity of selected hydride and alkylmetal molecules with single crystal surfaces of silicon and gallium arsenide. The goals are to gain insight into patterns of surface reactivity for this technologically important class of systems and to obtain quantitative data on the kinetics of elementary reactions. The research addresses a number of fundamental issues related to the production of technologically important compound semiconductors such as gallium arsenide. Semicondutor surface chemistry is an important area from both a scientific and a technological viewpoint. However, basic information on chemistry occurring on semiconductor surfaces is severely lacking. The results of this research will be very useful.