U.S.-China Cooperative Research (Solid State Physics): Elec-tronic Transport in Amorphous Silicon Multilayers

关于"非晶硅中的电子输运"的建议 多层膜"， 芝加哥和南京大学陈坤基教授， 由NSF和国家教育委员会（SEDC）赞助， 中国 研究人员指出，对于非晶半导体， 有可能使多层膜（超晶格）更便宜 而且是用比晶体更多的材料 半导体（微芯片），以及扩展设备 不适合小型， 易碎的水晶 这些非晶半导体，包括 数以百计的氢化非晶硅超薄层， 其他材料，每层要么几个原子层厚， 数百个原子厚，拥有几个有用的新传输 在非层状半导体中不能获得的性质， 即由短路产生的亚稳态电导状态 光脉冲或通过高偏置电压。 准二维 这些多层膜的性质允许新的材料特性， 设计了研究人员将探讨这些之间的关系。 介稳和介电电导过程与结构， 缺陷浓度和多层膜的氢含量。

This proposal on "Electronic Transport in Amorphous Silicon Multilayers," between Dr. Hellmut Fritzsche of the University of Chicago and Professor CHEN Kunji of Nanjing University, is jointly sponsored by NSF and the State Educational Commission (SEDC) of China. The investigators point out that with amorphous semiconductors, it is possible to make ultrathin multilayers (superlattices) cheaper and out of many more materials than it is with crystalline semiconductors (microchips), as well as to extend the device possibilities to large sized applications inappropriate for small, fragile crystals. These amorphous semiconductors, consisting of hundreds of ultra thin layers of hydrogenated amorphous silicon and other materials, each layer either a few atomic layers thick to hundreds of atoms thick, possess several useful new transport properties which cannot be obtained in unlayered semiconductors, namely metastable conductance states which are produced by a short light pulse or by a high bias voltage. The quasi two dimensional nature of these multilayers allows new material properties to be designed. The investigators will explore the relation of these metastable and bistable conductance processes with the structure, defect concentration, and the hydrogen content of the multilayers.