Engineering Research Equipment Grant: Suss MJB3 Deep UV Mask Aligner

这笔拨款用于深紫外光刻系统，以支持弗吉尼亚大学半导体器件实验室的许多研究项目。该实验室在开发用于低噪声，高频接收器应用的固态器件方面处于世界领先地位。虽然我们目前的标准紫外系统取得了巨大的成功，但我们对下一代高频设备的雄心勃勃的计划需要的特征尺寸远远超出其能力。深紫外光刻技术是这项工作中最可行的技术，因为它可以在资本投资和维护方面以适度的成本实现所需的分辨率（0.5 um）。与该系统一起开发的新设备将有助于在灵敏度和最大工作频率方面彻底改变高频接收器技术。这将使许多依靠这些接收器在射电天文学、化学光谱学、等离子体诊断、大气研究和高频通信和成像系统等领域工作的研究人员受益。

This grant is for a deep UV photolithography system to support the many research projects of the Semiconductor Device Laboratory at the University of Virginia. This laboratory is a world leader in the development of solid-state devices for low-noise, high frequency receiver applications. Although we have had great success with our current standard UV system, our ambitious plans for the next generation of high freuqency devices require feature sizes far beyond it's capability. Deep UV lithogrpahy is the most feasible technology for this work because it can achieve the required resolution (0.5 um) at a modest cost in terms of both capital investment and maintenance. The new devices that will be developed with this system will help to revolutionize high frequency receiver technology in terms of both sensitivity and maximum operating frequency. This will benefit many researchers who rely on these receivers for work in such areas as radio astronomy, chemical spectroscopy, plasma diagnostics, atmospheric research and high frequency communications and imaging systems.