Reflection High Energy Electron Diffraction Equipment

这笔赠款是为了购买必要的设备，将反射高能电子衍射应用于磷化物基化合物半导体的外延生长研究。该仪器是一种基于电荷耦合探测器的摄像系统，具有高灵敏度、高动态范围、高速实时测量数据传输、多光束测量能力、高角度分辨率等特点。该仪器用于研究化合物半导体外延生长过程中的位错动力学、倾斜超晶格的生长、表面原子结构、化学计量比的精确控制、量子线器件和量子效应晶体管。

This grant is to purchase the equipment necessary to apply reflection high energy electron diffraction to the study of epitaxial growth of phosphide-based compound semiconductors. The instrument is a charge coupled detector-based camera system which has the capability of high sensitivity and dynamic range, high speed data transfer for real time measurements, multiple beam measurement capacity, high angular resolution. The instrument is being used to study dynamics of dislocations during epitaxial growth of compound semiconductors, the growth of tilted superlattices, surface atomic structure, precision control of stoichiometry, quantum wire devices, and quantum-effect transistors.