REU: Femtosecond Dynamics of Novel Optoelectronic Materials

本研究的目的是在块状InGaP中进行飞秒测量，以获得亚皮秒测量技术的经验，以获得初步结果，为研究动力学的提案准备在大气压和高压下，InGaP基多量子阱中载流子的变化。建立了一个模型来评估压力对InGaP基多量子阱中载流子弛豫的影响。对高压下半导体的亚皮秒动力学的研究是一个迄今尚未被探索的领域，可能会提供关于这些材料的重要信息。一份详细的提案将在拟议的初步研究完成后提交给NSF研究启动奖励计划。

The object of this research is to conduct femtosecond measurements in bulk InGaP to gain experience of subpicosecond measurement techniques to obtain preliminary results for the preparation of a proposal to study the dynamics of carriers in InGaP based multiple quantum wells at atmospheric and high pressure. A model will be developed to evaluate the effect of pressure on the relaxation of carriers in the InGaP based multiple quantum wells. The study of the subpicosecond dynamics of semiconductors at high pressure is an area that has so far not been explored and likely to contribute important information on these materials. A detailed proposal will be submitted to NSF Research Initiation Award Program at the completion of the proposed preliminary studies.