Research on Optimization of a Whiskerless Mixer/Varactor Schottky Barrier Diode Structure for Application at Milli- meter and Submillimeter Wavelengths

外差毫米波和亚毫米波接收器目前使用晶须接触肖特基势垒二极管，以获得最佳的灵敏度。然而，来自本实验室和其他实验室的平面肖特基二极管正开始在更低的频率(100283千兆赫)上使用，获得了出色的ı1，2！。这项工作最终将导致可靠的毫米波集成电路和平面天线阵列的发展。器件结构的优化将使工作频率进入亚毫米范围。过去3年，美国国家科学基金会赞助弗吉尼亚大学和蒙茅斯堡ETDL的合作研究，设计和制造了具有优异直流和射频特性的无须二极管。这项拟议研究的目标是继续研究用于信号频率在100 GHz及以上的混频器和变容二极管的无须二极管。

Heterodyne millimeter and submillimeter wave receivers presently use whisker-contacted Schottky barrier diodes for the best possible sensitivity. However, planar Schottky diodes from this laboratory and others are beginning to be utilized at the lower frequencies (100- 283 GHz) with excellent results ı1,2!. This work will ultimately lead to the development of reliable millimeter wave integrated circuits and planar antenna arrays. Optimization of the device structure will move the operating frequency into the submillimeter range. Cooperative NSF sponsored research over the past 3 years between the University of Virginia and Fort Monmouth ETDL has resulted in the design and fabrication of whiskerless diodes with excellent DC and RF characteristics. This objective of the proposed research is to continue work on the whiskerless diode for mixer and varactor applications at signal frequencies at and above 100 GHz.