SIMOX Structures for Optical Waveguides and Electro- Optic Devices in Silicon

晶体硅是1.3 ~ 1.6微米波长范围内的新型光波导材料。这一建议将推动硅导波光学，特别是硅光互连技术的发展。我们将研究一种新颖的三维绝缘体上硅（SOI）导波结构，该结构将允许在大面积硅片内的两个堆叠层上进行光通信。为了达到这个目的，我们将基于Spire在制造多层氧植入分离（SIMOX）结构方面的独特经验，使用多个氧离子植入。此外，我们将研究制造低损耗SOI波导和集成在SOI波导中的高速电光器件的方法。为了证明硅是一种可行且有价值的光学材料，低损耗导引和实用的光电元件是需要研究的两个关键领域。第二阶段工作的目标将是利用第一阶段的成果构建实用的、高性能的导波光电元件。将从第一阶段中选择最适合的SIMOX结构。相位II的一些可能的方法是在SOI通道波导上制造肖特基势垒或p-n结电极，以获得1.3微米波长的高性能光学相位调制器。

Crystalline silicon is a new material for optical waveguiding in the 1.3 to 1.6 micron wavelength range. This proposal will advance the state-of-the-art of silicon guided-wave optics, especially silicon optical interconnects. We shall investigate a novel, three- dimensional, silicon-on-insulator (SOI) guided-wave structure that will allow optical communications on two stacked levels within a large-area silicon wafer. To do this we shall use multiple implants of oxygen ions based on Spire's unique experience in producing multi- level Separation by Implantation of Oxygen (SIMOX) structures. In addition, we shall examine ways of fabricating low-loss SOI waveguides and high-speed electro-optic (EO) devices integrated in SOI waveguides. Low-loss guiding and practical EO components are two key areas that need to be researched to establish that silicon is a viable and valuable optical material. Goal of the Phase II work will be to exploit Phase I results to construct practical, high performance, guided-wave electro-optic components in SOI. The best-suited SIMOX structures from Phase I will be selected. Some possible approaches for Phase II are to fabricate Schottky-barrier or p-n junction electrodes on SOI channel waveguides to obtain high-performance optical phase modulators for the 1.3 micron wavelength.