SBIR Phase II: Extremely High-Temperature n-GaN/p-B-SiC/n-GaN Heterojunction Bipolar Transistors on Large-Area, Compliant Si-on-Insulator Substrates

SBIR 第二阶段：大面积、兼容的绝缘体上硅衬底上的极高温 n-GaN/p-B-SiC/n-GaN 异质结双极晶体管

• 批准号: 9710628
• 负责人: Fereydoon Namavar
• 金额: $ 29.73万
• 依托单位: Spire Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-11-01 至 2001-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9710628&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Extremely; Temperature

*** 9710628 Namavar This Small Business Innovation Research Phase II Project is to improve the quality of GaN layers by carbonizing the entire top layer of SIMOX, and to grow GaN by MOCVD on SiC-on-insulator (SiCOI) structures. Phase II will also fabricate extremely high-temperature (HT) n-GaN/p-beta-SiD/n-beta-SiC and n-GaN/p-beta-SiC/n-FaN heterojunction bipolar transistors (HBT's) on large-area compliant SIMOX structures. GaN/beta-SiC/GaN HBT structures will be made by etching the samples from the back and selectively depositing GaN. Phase I results for partially carbonized Si on SIMOX clearly demonstrated the advantage of an SOI structure for growth of beta-SiC. A much narrower rocking curve specta was obtained from SiC grown on SIMOX as compared to that grown on Si.. Rocking curve data, unlike Bragg-Brentano data, are sensitive to the mosaic structure of heteroepitaxial growt, and thus measure crystalline quality. Photoluminescence of MOCVD-grown GaN on SiC/SIMOX shows much stronger purple and weaker yellow emission than GaN on SiC/Si or on sapphire. Also demonstrated was the possibility of selective epitaxial growth of SiC and GaN. HT HBT's are useful for under-the-hood automotive electronics and electronic replacement of avionic hydraulic systems. ***

* 9710628纳马瓦尔 这个小型企业创新研究第二阶段项目是通过碳化SIMOX的整个顶层来提高GaN层的质量，并通过MOCVD在绝缘体上SiC（SiCOI）结构上生长GaN。 第二阶段还将在大面积兼容SIMOX结构上制造极高温（HT）n-GaN/p-beta-SiD/n-beta-SiC和n-GaN/p-beta-SiC/n-FaN异质结双极晶体管（HBT）。 GaN/β-SiC/GaN HBT结构将通过从背面蚀刻样品并选择性地沉积GaN来制备。 SIMOX上部分外延Si的第一阶段结果清楚地证明了SOI结构对于β-SiC生长的优势。 与Si衬底上生长的SiC相比，SIMOX衬底上生长的SiC得到了窄得多的摇摆曲线谱。 与Bragg-Brentano数据不同，摇摆曲线数据对异质外延生长的镶嵌结构敏感，从而测量晶体质量。 SiC/SIMOX上MOCVD生长的GaN的光致发光显示出比SiC/Si或蓝宝石上GaN强得多的紫色和弱得多的黄色发射。 还证明了选择性外延生长SiC和GaN的可能性。 HT HBT可用于发动机罩下的汽车电子设备和航空电子液压系统的电子更换。 ***