SBIR Phase II: Extremely High-Temperature n-GaN/p-B-SiC/n-GaN Heterojunction Bipolar Transistors on Large-Area, Compliant Si-on-Insulator Substrates

*9710628 Namavar这个小型企业创新研究第二阶段项目旨在通过碳化整个SIMOX顶层来提高GaN层的质量，并通过MOCVD在绝缘上碳化硅(SiCOI)结构上生长GaN。第二阶段还将在大面积兼容的SIMOX结构上制备极高温(HT)n-GaN/p-β-SID/n-β-SiC和n-GaN/p-β-SiC/n-FAN异质结双极晶体管(HBT)。GaN/β-碳化硅/GaN HBT结构将通过从背面刻蚀样品并选择性地沉积GaN来制备。在SIMOX上部分碳化的Si的I相结果清楚地表明了SOI结构对生长β-碳化硅的优势。在SIMOX衬底上生长的碳化硅的摇摆曲线比在硅衬底上生长的要窄得多。与Bragg-Brentano数据不同，摇摆曲线数据对异质外延生长的马赛克结构很敏感，因此可以测量晶体质量。在SiC/SIMOX衬底上MOCVD生长的GaN的光致发光比在SiC/Si或蓝宝石衬底上生长的GaN有更强的紫光发射和更弱的黄光发射。还证明了选择性外延生长碳化硅和氮化镓的可能性。HTHBT可用于发动机罩下的汽车电子设备和航空电子液压系统的电子更换。***

*** 9710628 Namavar This Small Business Innovation Research Phase II Project is to improve the quality of GaN layers by carbonizing the entire top layer of SIMOX, and to grow GaN by MOCVD on SiC-on-insulator (SiCOI) structures. Phase II will also fabricate extremely high-temperature (HT) n-GaN/p-beta-SiD/n-beta-SiC and n-GaN/p-beta-SiC/n-FaN heterojunction bipolar transistors (HBT's) on large-area compliant SIMOX structures. GaN/beta-SiC/GaN HBT structures will be made by etching the samples from the back and selectively depositing GaN. Phase I results for partially carbonized Si on SIMOX clearly demonstrated the advantage of an SOI structure for growth of beta-SiC. A much narrower rocking curve specta was obtained from SiC grown on SIMOX as compared to that grown on Si.. Rocking curve data, unlike Bragg-Brentano data, are sensitive to the mosaic structure of heteroepitaxial growt, and thus measure crystalline quality. Photoluminescence of MOCVD-grown GaN on SiC/SIMOX shows much stronger purple and weaker yellow emission than GaN on SiC/Si or on sapphire. Also demonstrated was the possibility of selective epitaxial growth of SiC and GaN. HT HBT's are useful for under-the-hood automotive electronics and electronic replacement of avionic hydraulic systems. ***