Two-Dimensional Guided Wave Spatial Light Controller Based on SIMOX Processing and Germanium-Silicon Alloys
Two-Dimensional Guided Wave Spatial Light Controller Based on SIMOX Processing and Germanium-Silicon Alloys
批准号:
9200540
负责人:
Fereydoon Namavar
金额:
$24.98万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-10-15 至 1995-10-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
In Phase I both total optical isolation and efficient guide to guide coupling were accomplished for the first time in silicon. Based upon these achievements, parallel arrays of electronically phase-modulated waveguide structures will be fabricated in Phase II, configured to spatially dissect an incident coherent planar waveform, and used to rotate the output light-beam through constructive interference effects in the far field. A two dimensional array of phase-control channels would allow scanning the beam over the entire image plane. Initial efforts will be focused on fabrication and testing of a one dimensional, horizontal array of rigid waveguides placed over a single buried SiO2 layer; this device has potential as an Optical Spectrum Analyzer for de-multiplexing sets of nominally 1.3 um laser signals running simultaneously in a single fiber communication system. Later, a double buried SIMOX structure with two silicon cores will be constructed to demonstrate the highly novel concept of vertical beam steering. Integration of the two sets of guides into a two dimensional structure will allow rapid agile steering in both directions.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
SBIR Phase I: Nanocrystalline Superhard Homometallic Films for Replacement of Ceramic Hard Coatings
-
批准号:0128330
-
项目类别:Standard Grant
-
资助金额:$10.0万
-
财政年份:2002
-
负责人:Fereydoon Namavar
-
依托单位:
SBIR Phase II: Extremely High-Temperature n-GaN/p-B-SiC/n-GaN Heterojunction Bipolar Transistors on Large-Area, Compliant Si-on-Insulator Substrates
-
批准号:9710628
-
项目类别:Standard Grant
-
资助金额:$29.73万
-
财政年份:1997
-
负责人:Fereydoon Namavar
-
依托单位:
SBIR Phase I: Carbon Nitride for Superhard Coatings
-
批准号:9560591
-
项目类别:Standard Grant
-
资助金额:$7.49万
-
财政年份:1996
-
负责人:Fereydoon Namavar
-
依托单位:
SBIR Phase I: Ultrathin SiC-on-Insulator (SiCOI) for ALE Growth of Low-Defect GaN
-
批准号:9560131
-
项目类别:Standard Grant
-
资助金额:$7.5万
-
财政年份:1996
-
负责人:Fereydoon Namavar
-
依托单位:
Vertical Cavity Surface Emitting LED/Laser Based on Er- Doped Porous Poly-Si on Glass Substrates
-
批准号:9461668
-
项目类别:Standard Grant
-
资助金额:$6.49万
-
财政年份:1995
-
负责人:Fereydoon Namavar
-
依托单位:
Silicon Based Blue Light Emitting Diode
-
批准号:9261385
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:1993
-
负责人:Fereydoon Namavar
-
依托单位:
GaAs Buffer Layers by Ion Implantation and Metalorganic Chemical Vapor Deposition
-
批准号:9160122
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:1992
-
负责人:Fereydoon Namavar
-
依托单位:
Silicon Flat Panel Displays
-
批准号:9161265
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:1992
-
负责人:Fereydoon Namavar
-
依托单位:
SIMOX Structures for Optical Waveguides and Electro- Optic Devices in Silicon
-
批准号:9060220
-
项目类别:Standard Grant
-
资助金额:$4.99万
-
财政年份:1991
-
负责人:Fereydoon Namavar
-
依托单位:
Silicon-Germanium and Silicon-Tin Waverguides for Heterostructure Optoelectronic Devices
-
批准号:8961379
-
项目类别:Standard Grant
-
资助金额:$4.99万
-
财政年份:1990
-
负责人:Fereydoon Namavar
-
依托单位:
Reduction of Defects in Silicon-on-Sapphire Material by Ion Implantation of Germanium for Application to Bipolar Technology
-
批准号:8861225
-
项目类别:Standard Grant
-
资助金额:$4.98万
-
财政年份:1989
-
负责人:Fereydoon Namavar
-
依托单位:
国内基金
海外基金
Scalable Learning and Optimization: High-dimensional Models and Online Decision-Making Strategies for Big Data Analysis
-
批准号:--
-
项目类别:合作创新研究团队
-
资助金额:--
-
批准年份:2024
-
负责人:姚韬
-
依托单位: