Two-Dimensional Guided Wave Spatial Light Controller Based on SIMOX Processing and Germanium-Silicon Alloys
基于SIMOX工艺和锗硅合金的二维导波空间光控制器
基本信息
- 批准号:9200540
- 负责人:
- 金额:$ 24.98万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:1992
- 资助国家:美国
- 起止时间:1992-10-15 至 1995-10-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In Phase I both total optical isolation and efficient guide to guide coupling were accomplished for the first time in silicon. Based upon these achievements, parallel arrays of electronically phase-modulated waveguide structures will be fabricated in Phase II, configured to spatially dissect an incident coherent planar waveform, and used to rotate the output light-beam through constructive interference effects in the far field. A two dimensional array of phase-control channels would allow scanning the beam over the entire image plane. Initial efforts will be focused on fabrication and testing of a one dimensional, horizontal array of rigid waveguides placed over a single buried SiO2 layer; this device has potential as an Optical Spectrum Analyzer for de-multiplexing sets of nominally 1.3 um laser signals running simultaneously in a single fiber communication system. Later, a double buried SIMOX structure with two silicon cores will be constructed to demonstrate the highly novel concept of vertical beam steering. Integration of the two sets of guides into a two dimensional structure will allow rapid agile steering in both directions.
在第一阶段,完全光隔离和高效 引导到引导耦合完成了 第一次在硅。 基于这些 成就,电子平行阵列 相位调制波导结构将 在第二阶段制造,配置为在空间上 剖析入射相干平面波形,以及 用于旋转输出光束通过 远场的相长干涉效应。 一 二维相控通道阵列 将允许在整个区域上扫描光束 图像平面 初期工作将侧重于 制造和测试一维, 刚性波导的水平阵列放置在 单埋SiO2层;该器件具有作为 用于解复用的光谱分析仪 标称1.3 μ m激光信号组运行 同时在单光纤通信中 系统 后来,双埋SIMOX结构 两个硅芯将被构造成 展示了高度新颖的垂直概念, 波束控制 两套指南的整合 变成二维结构, 在两个方向上灵活地转向。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Fereydoon Namavar其他文献
Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers
- DOI:
10.1007/bf02649987 - 发表时间:
1993-12-01 - 期刊:
- 影响因子:2.500
- 作者:
Fereydoon Namavar;N. M. Kalkhoran;A. Claverie;Z. Liliental-Weber;E. R. Weber;P. A. Sekula-Moisé;S. Vernon;V. Haven - 通讯作者:
V. Haven
ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations
- DOI:
10.1016/j.nimb.2012.01.023 - 发表时间:
2012-09-01 - 期刊:
- 影响因子:
- 作者:
Fengyuan Lu;Maik Lang;Mengbing Huang;Fereydoon Namavar;Christina Trautmann;Rodney C. Ewing;Jie Lian - 通讯作者:
Jie Lian
Visible and infrared (1.54 μm) emission from Er-lmplanted porous Si for photonic applications
- DOI:
10.1007/bf02666172 - 发表时间:
1996-01-01 - 期刊:
- 影响因子:2.500
- 作者:
Fereydoon Namavar;Feng Lu;Clive H. Perry;Annmarie Cremins;Nader Kalkhoran;Richard A. Soref - 通讯作者:
Richard A. Soref
Fereydoon Namavar的其他文献
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{{ truncateString('Fereydoon Namavar', 18)}}的其他基金
SBIR Phase I: Nanocrystalline Superhard Homometallic Films for Replacement of Ceramic Hard Coatings
SBIR 第一阶段:用于替代陶瓷硬质涂层的纳米晶超硬同质金属薄膜
- 批准号:
0128330 - 财政年份:2002
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
SBIR Phase II: Extremely High-Temperature n-GaN/p-B-SiC/n-GaN Heterojunction Bipolar Transistors on Large-Area, Compliant Si-on-Insulator Substrates
SBIR 第二阶段:大面积、兼容的绝缘体上硅衬底上的极高温 n-GaN/p-B-SiC/n-GaN 异质结双极晶体管
- 批准号:
9710628 - 财政年份:1997
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
SBIR Phase I: Carbon Nitride for Superhard Coatings
SBIR 第一阶段:用于超硬涂层的氮化碳
- 批准号:
9560591 - 财政年份:1996
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
SBIR Phase I: Ultrathin SiC-on-Insulator (SiCOI) for ALE Growth of Low-Defect GaN
SBIR 第一阶段:用于低缺陷 GaN ALE 生长的超薄绝缘体上碳化硅 (SiCOI)
- 批准号:
9560131 - 财政年份:1996
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
Vertical Cavity Surface Emitting LED/Laser Based on Er- Doped Porous Poly-Si on Glass Substrates
玻璃基板上基于掺铒多孔多晶硅的垂直腔表面发射 LED/激光器
- 批准号:
9461668 - 财政年份:1995
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
Silicon Based Blue Light Emitting Diode
硅基蓝光发光二极管
- 批准号:
9261385 - 财政年份:1993
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
GaAs Buffer Layers by Ion Implantation and Metalorganic Chemical Vapor Deposition
通过离子注入和金属有机化学气相沉积形成砷化镓缓冲层
- 批准号:
9160122 - 财政年份:1992
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
SIMOX Structures for Optical Waveguides and Electro- Optic Devices in Silicon
用于硅光波导和电光器件的 SIMOX 结构
- 批准号:
9060220 - 财政年份:1991
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
Silicon-Germanium and Silicon-Tin Waverguides for Heterostructure Optoelectronic Devices
用于异质结构光电器件的硅-锗和硅-锡波导
- 批准号:
8961379 - 财政年份:1990
- 资助金额:
$ 24.98万 - 项目类别:
Standard Grant
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