Silicon Based Blue Light Emitting Diode

硅基蓝光发光二极管

• 批准号: 9261385
• 负责人: Fereydoon Namavar
• 金额: $ 5万
• 依托单位: Spire Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-05-01 至 1994-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9261385&HistoricalAwards=false
• 关键词: Silicon; Based; Blue; Light; Emitting

Spire recently fabricated the first yellow and orange- emitting heterojunction light emitting diode (LED) based on silicon. These devices were fabricated by depositing a transparent n-type semiconductor (indium- tinoxide) on the porous surface of electrochemically etched p-type Si wafers. The key to the visible emission is believed to be the quantum confinement phenomenon in the nanometer-sized Si crystallites in the porous Si layers. As crystallites get smaller, the emission spectrum shifts to shorter wavelengths (blue shift). However, we have noted that Si crystallites with light emission below yellow wavelengths are physically too fragile and susceptible to environmental effects and thus are not suitable for device fabrication. We propose a unique solution to the above problem; since crystalline carbon (diamond) has a large band gap of 5.47 eV, alloys of only a few percent C in Si will readily increase the base band gap of the new material into the range where quantum structures of stable dimensionality can be prepared. We shall use non- equilibrium deposition conditions to assure epitaxial growth of Si 1-x Cx alloys without the formation of SiC phase. In Phase I, we will use the chemical vapor deposition (CVD) process to grow epitaxial Si 1-x Cx layers on Si substrates at low temperatures. These layers will then be electrochemically etched to produce porous layers capable of light emission in the blue wavelength range. The material and structural quality of the epitaxial and porous layers will be evaluated using various characterization techniques. The blue photoluminescence in porous Si 1-x Cx layers will be demonstrated. We will fabricate high efficiency Si- based blue LEDs in Phase II.

Spire最近制作了 先是黄色和橙子- 发射异质结光 发光二极管（LED）基于 硅。这些器械 通过沉积 透明n型 半导体（铟- 锡氧化物）上的多孔 电化学表面 蚀刻的p型Si晶片。的 可见光发射的关键是 被认为是量子 禁闭现象 纳米硅 多孔硅中的微晶 层次。当微晶 发射光谱越小， 波长变短 (blue移位）。但我们 注意到， 微晶与光 黄光以下发射 波长在物理上也 脆弱易受 环境影响，因此 不适用于器械 捏造 我们提出了一个独特的解决方案 针对上述问题，由于 结晶碳（金刚石） 具有5.47的大带隙 eV，合金只有几个 Si中C的百分比将容易地 增加基带带隙 新材料进入 量子结构 稳定的维度可以 做好准备我们将使用非- 平衡沉积 保证外延生长的条件 Si_（1-x）Cx合金的生长 不形成SiC 相位 在第一阶段，我们将使用 化学气相沉积 (CVD)成长过程 外延Si 1-x Cx层， Si衬底在低 温度这些层 然后将被电化学地 蚀刻以产生多孔 能够发光的层 蓝光发射 波长范围材料 和结构质量 外延和多孔层 将使用 各种表征 技术.蓝色 多孔硅光致发光 1-x Cx层将是 演示。我们将 制造高效率的Si- 第二阶段的蓝色LED。