GaAs Buffer Layers by Ion Implantation and Metalorganic Chemical Vapor Deposition

通过离子注入和金属有机化学气相沉积形成砷化镓缓冲层

• 批准号: 9160122
• 负责人: Fereydoon Namavar
• 金额: $ 5万
• 依托单位: Spire Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-01-15 至 1992-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9160122&HistoricalAwards=false
• 关键词: GaAs; Buffer; Layers; Ion; Implantation

Device performance of GaAs metal- semiconductor field effect transistors (MESFETs) on conventional semi-insulating GaAs substrates has been limited by backgate or sidegate effects which can lead to undesirable cross-talk between neighboring devices and thus impose limits on packing densities. Recent research has shown that incorporation of a low temperature buffer layer grown by molecular beam epitaxy (MBE) can result in many performance improvements, including elimination of backgating. Because of its very high processing cost, MBE is not commercially viable production method. We propose to form an effect buffer layer using ion implantation, demonstrated manufacturable process. One of the dominant characteristics of the MBE-grown buffer layers is an excess of As in the film. Ion implantation is well suited to simulate the MBE layers since implantation conditions can be tightly controlled to precisely engineer the As profile by adjusting implantation parameters such as dose, energy, and dose rate. Phase I work is to use ion implantation to produce As-rich isolating buffer layers in GaAs. The structural and electrical properties of the buffer layers will be studied and compared to those of MBE-grown layers.

传统半绝缘砷化镓衬底上的砷化镓金属半导体场效应晶体管(MESFET)的器件性能一直受到背栅或栅极效应的限制，这种效应可以导致相邻器件之间不希望的串扰，从而对封装密度施加限制。最近的研究表明，加入由分子束外延(MBE)生长的低温缓冲层可以导致许多性能改进，包括消除走回头路。由于其非常高的处理成本，MBE不是商业上可行的生产方法。我们建议使用离子注入形成效应缓冲层，证明了可制造的工艺。分子束外延生长的缓冲层的主要特征之一是在薄膜中有过量的As。离子注入非常适合模拟MBE层，因为可以严格控制注入条件，通过调整注入参数，如剂量，能量，和剂量率。第一阶段的工作是利用离子注入在砷化镓中产生富砷隔离缓冲层。我们将研究缓冲层的结构和电学性质，并将其与分子束外延生长的缓冲层进行比较。