Vertical Cavity Surface Emitting LED/Laser Based on Er- Doped Porous Poly-Si on Glass Substrates

本项目将通过在多孔硅（由玻璃上的多孔硅制成）中植入Er来制造垂直腔面发射LED/激光器。Spire是第一个证明：(a)具有量子限制特性的多孔多晶硅和(b)掺铒多孔硅的强室温红外发射。他们的研究结果清楚地表明，室温下多孔硅中Er的光学发射效率与用于商用红外led的In0.53Ga0.47As材料相当。铒注入体硅的红外强度对温度的依赖性是阻碍硅铒在光电子领域应用的主要障碍。结果表明，当温度从77K升高到室温时，多孔硅的红外强度降低了约50%，相比之下，块状硅中的Er降低了1000倍。在第一阶段，他们将在玻璃基板上沉积透明导体（如ITO），然后是多晶硅。在制备出具有量子限制性质的多孔多晶硅后，将样品注入铒并退火以使硅纳米结构再结晶。最后，他们将沉积一层薄薄的金属薄膜，镜面/触点，完成多孔多晶硅基红外肖特基LED。第二阶段将专注于设备的优化和商业化，以及形成用于生产红外激光器的光学腔。

This project will fabricate a vertical cavity surface-emitting LED/laser by implanting Er into porous silicon (produced from poly-porous silicon on glass). Spire was the first to demonstrate: (a) porous polysilicon with quantum-confined properties and (b) strong, room-temperature IR emission from Er-doped porous Si. Their results clearly indicate that optical emission efficiency of Er in porous silicon at room temperature is comparable to In0.53Ga0.47As material, used for commercial infrared LEDs. Strong temperature dependence of IR intensity for Er-implanted bulk Si is a major obstacle preventing the application of Si:Er in optoelectronics. Results show about a 50% decrease in IR intensity for porous Si when the temperature is raised from 77K to room temperature, as compared to a decrease of a factor of 1000 for Er in bulk Si. In Phase I, they will deposit a transparent conductor (such as ITO) onto a glass substrate, followed by polysilicon. After processing to fabricate porous polysilicon with quantum-confined properties, samples will be implanted with erbium and annealed to recrystallize the silicon nanostructures. Finally, they will deposit a thin metal film mirror/contact, to complete a porous polycrystalline silicon-based infrared Schottky LED. Phase II will concentrate on optimization and commercialization of the devices, and on formation of optical cavities to produce IR lasers.