SBIR Phase I: Carbon Nitride for Superhard Coatings

SBIR 第一阶段：用于超硬涂层的氮化碳

• 批准号: 9560591
• 负责人: Fereydoon Namavar
• 金额: $ 7.49万
• 依托单位: Spire Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-03-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9560591&HistoricalAwards=false
• 关键词: SBIR; Phase; Carbon; Nitride; Superhard

This Small Business Innovation Research Phase I project will synthesize a C3N4 phase and develop a method to stabilize the C3N4 films. The hardest material which can be synthesized is based on a combination of B, C, and N. However, materials and compounds based on these elements are metastable at standard pressures and temperatures. Therefore, one needs a novel, non-equilibrium method to process and synthesize them. The firm has developed such methods, including ion beam assisted deposition (IBAD) and deposition from electron cyclotron resonance (ECR). (C3N4 should be harder than diamond. The synthesis of C-N films with a hardness about half that of diamond and a smoothness of about 0.5 nm has been documented. These films were adherent on most substrates, including steel and magnetic thin-film materials (as in computer disks), however, no direct evidence of a carbon nitride phase was demonstrated. IBAD is an advanced, low-temperature, thin-film deposition process combining evaporation with simultaneous ion bombardment; it is capable of depositing adherent films on virtually any substrate. The Phase I project will deposit carbon nitride films using IBAD with an ionized-vapor source for carbon. Ionizing both carbon and nitrogen would enhance the probability of forming carbon nitride films. Stress is the major obstacle in the formation of thick films with the theoretically expected hardness value; stress reduction will be addressed by a number of methods, including the introduction of a third element such as boron. A process designed to deposit super-hard films on essentially any shape substrate has extremely high commercial promise. Carbon nitride films are inexpensive, extremely hard and scratch resistant, and easily applied to metal surfaces or polymers.

这个小企业创新研究第一阶段项目将合成C3 N4相，并开发一种稳定C3 N4薄膜的方法。可以合成的最硬的材料是基于B、C和N的组合。然而，基于这些元素的材料和化合物在标准压力和温度下是亚稳态的。因此，人们需要一种新的非平衡方法来处理和合成它们。该公司已经开发了这样的方法，包括离子束辅助沉积（IBAD）和电子回旋共振（ECR）沉积。 (C3N4应该比钻石还硬已记录了硬度约为金刚石的一半且光滑度约为0.5nm的C-N膜的合成。这些薄膜附着在大多数基材上，包括钢和磁性薄膜材料（如计算机磁盘），然而，没有直接证据表明存在氮化碳相。 IBAD是一种先进的低温薄膜沉积工艺，结合了蒸发和同步离子轰击;它能够在几乎任何基材上沉积粘附膜。第一阶段项目将使用离子化蒸汽源IBAD沉积存款碳氮化物薄膜。同时离子化碳和氮将增加形成氮化碳膜的可能性。应力是形成具有理论预期硬度值的厚膜的主要障碍;应力降低将通过许多方法来解决，包括引入第三元素，如硼。 设计用于在基本上任何形状的基底上存款超硬膜的方法具有极高的商业前景。氮化碳薄膜价格低廉，非常坚硬，耐刮擦，易于应用于金属表面或聚合物。