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Silicon Flat Panel Displays

Silicon Flat Panel Displays
硅平板显示器
批准号:
9161265
负责人:
Fereydoon Namavar
金额:
$5.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-01-15 至 1992-09-30

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中文摘要
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英文摘要
Spire recently demonstrated bright visible light emission from Silicon quantum wires. Silicon substrates were electrochemically etched to produce a porous surface with nanometer size Si columns (quantum wires). When excited with a blue laser beam, or UV light (photoluminescence), or when immersed in an H2O:NaC1 electrolyte under an electric field, the treated samples emitted very bright red light. Moreover, we demonstrated that it is possible to tailor the emission spectrum by anodizing Si-based alloys such as Si1-xGex or ion implanted Si (e.g., Er+-implanted Si). If strong electroluminescence (EL) can be demonstrated in this material then the driver electronics and light- emitting elements of a flat panel display can be integrated into the same Si substrate. This development would result in significant reduction of display panel fabrication steps and cost. We believe that these recent findings, combined with mature Si electronics technology, offer a rare opportunity for a major advance in commercial flat-panel display technology. We propose a program to investigate fabrication of monochrome or multi- color Si flat-panel displays. In Phase I, we will optimize processing of Si quantum wires and study electroluminescent behavior. Individual test structures will be fabricated and EL performance demonstrated. In Phase II, we will fabricate multi-pixel monochrome Si EL displays and explore fabrication of multi-color Si EL displays.
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SBIR Phase I: Nanocrystalline Superhard Homometallic Films for Replacement of Ceramic Hard Coatings
  • 批准号:
    0128330
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    2002
  • 负责人:
    Fereydoon Namavar
  • 依托单位:
SBIR Phase II: Extremely High-Temperature n-GaN/p-B-SiC/n-GaN Heterojunction Bipolar Transistors on Large-Area, Compliant Si-on-Insulator Substrates
  • 批准号:
    9710628
  • 项目类别:
    Standard Grant
  • 资助金额:
    $29.73万
  • 财政年份:
    1997
  • 负责人:
    Fereydoon Namavar
  • 依托单位:
SBIR Phase I: Carbon Nitride for Superhard Coatings
  • 批准号:
    9560591
  • 项目类别:
    Standard Grant
  • 资助金额:
    $7.49万
  • 财政年份:
    1996
  • 负责人:
    Fereydoon Namavar
  • 依托单位:
SBIR Phase I: Ultrathin SiC-on-Insulator (SiCOI) for ALE Growth of Low-Defect GaN
  • 批准号:
    9560131
  • 项目类别:
    Standard Grant
  • 资助金额:
    $7.5万
  • 财政年份:
    1996
  • 负责人:
    Fereydoon Namavar
  • 依托单位:
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