Chemical Vapor Deposition Epitaxial Buffer Layers for Superconductors

拟议研究的目标是开发外延 通过化学气相沉积（CVD）生长的缓冲层 提供扩散/反应屏障和过渡， 晶体结构和晶格参数之间的低损耗单 晶体衬底和外延单晶高 高温超导薄膜 第一阶段将证明 通过homoepitaxis的概念。 例如氧化镁膜 将在单晶氧化镁衬底上生长， 镧铝氧化物薄膜将生长在单一的镧 氧化铝衬底。 这些电影将被评估为 晶体质量、表面光滑度和均匀性以及工艺 调节条件以优化膜性能。 在 第二阶段的过程将扩展到异质外延， 提供用于超导的外延缓冲层的目的 单晶氧化铝等基材上的薄膜 （蓝宝石），其对于微波应用是高度期望的。

The objective of the proposed research is to develop epitaxial buffer layers grown by chemical vapor deposition (CVD) that will provide both a diffusion/reaction barrier and a transition in crystal structure and lattice parameter between a low loss single crystal substrate and an epitaxial, single crystal high temperature superconducting film. Phase I will establish proof of concept via homoepitaxy. For example magnesium oxide films will be grown on sing crystal magnesium oxide substrates and lanthanum aluminum oxide films will be grown on single lanthanum aluminum oxide substrates. The films will be evaluated for crystal quality, surface smoothness and uniformity, and process conditions will be adjusted to optimize film properties. In Phase II the process will be extended to heteroepitaxy, with the goal of providing epitaxial buffer layers for superconducting films on substrates such as single crystal aluminum oxide (sapphire) that are high desirable for microwave applications.