Avalanche Electron Emitter Array for Vacuum Microelectronics

本研究涉及的设计，制造， 真空微电子器件特性 （二极管和三极管）使用硅浅p-n 结冷阴极阵列这将是 使用超浅p-n结实现 作为冷阴极在雪崩区中偏置， 和一个内置于芯片上的多晶硅悬臂梁， 一个阳极（对于二极管）的栅极（对于二极管）。 一 将尝试改进自对准技术 发射电流密度和均匀性。 网格 将在1-2微米以上的距离， 阴极 这些设备将被排列起来， 总发射电流的大小。 的 所用的制造技术将完全兼容 采用IC技术，可在低电压下工作 应该达到的目标。 潜在的应用包括 平板显示器、快速开关器件，以及作为 用于科学仪器的电子源。

This research addresses the design, fabrication, and characterization of vacuum microelectronic devices (diodes and triodes) using silicon shallow p-n junction cold cathode arrays This will be accomplished using an ultra shallow p-n junction biased in the avalanche region as a cold cathode, and a built-on-chip polysilicon cantilever beam as an anode (for a diode) of a grid (for a triode). A self-alignment technique will be tried to improve emission current density and uniformity. The grid will be at a distance of 1-2 microns above the cathode. These devices will be arrayed to increase the magnitude of total emission current. The fabrication technology used will be fully compatible with IC technology, and operation at low voltages should be achieved. Potential applications include flat panel displays, fast switching devices, and as an electron source for scientific instrumentation.