U.S.-France Cooperative Research: Plasma Processes in Microelectronics Materials Preparation

这个为期三年的奖项支持北卡罗来纳大学的Eugene Irene和法国奥赛巴黎大学（南）的Bernard Agius在微电子材料等离子体过程方面的合作研究。等离子体广泛用于制备薄膜，用于微电子器件。在本研究中，研究人员将研究薄膜生长和表面制备过程中等离子体变化的机制，并开发修饰等离子体的方法，以优化薄膜制备过程中所需的性能和最小化损伤。利用北卡罗来纳大学开发的技术，美国研究人员将专注于等离子体损伤过程的演变，特别是那些产生损伤的特性，以及将损伤降到最低的程序。样品将用ECR（电子回旋共振）制备和表征。这些材料的表征将在奥赛和北卡罗来纳同时进行。该项目将受益于这些共同的努力、重复的实验和补充的设施。这项研究将提高我们对等离子体过程及其与超薄薄膜生产的关系的认识。研究结果对高性能电子器件的发展具有重要意义。

This three-year award supports cooperative research on plasma processes in microelectronic materials between Eugene Irene of the University of North Carolina and Bernard Agius of the University of Paris (South), Orsay, France. Plasmas are used extensively for the preparation of thin films for application in microelectronic devices. In this proposal the investigators will study the mechanisms for changes in plasmas during film growth and surface preparation and develop methods for modifying plasmas in order to optimize desirable properties and minimize damage during preparation of thin films. Using techniques developed at the University of North Carolina, the U.S. investigator will focus on the evolution of plasma damage processes, in particular, those properties which produce damage, and the procedures which minimize damage. Samples will be prepared and characterized using ECR (Electron Cyclotron Resonance). Characterization of these materials will be performed simultaneously at both Orsay and North Carolina. The project will benefit from these combined efforts, the redundant experiments and the complementary facilities. This research will advance our knowledge about plasma processes and its relationship to the production of very thin films. The results of this research will be important to the development of high performance electronic devices.