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High Concentration Ozone Production for Semiconductor Manufacturing

High Concentration Ozone Production for Semiconductor Manufacturing
用于半导体制造的高浓度臭氧生产
批准号:
9161024
负责人:
David Boyers
金额:
$5.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-01-01 至 1992-09-30

项目摘要

项目成果

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中文摘要
翻译
这项研究的目的是探索开发紧凑型、高浓度、臭氧产生设备的可行性,以满足半导体制造和材料加工行业的苛刻要求。使用臭氧化学的新兴加工技术已经引起了对这种设备的需求。电流发生器不足以完成这项任务,而且太大,不能安装在净室环境中靠近化学气相沉积系统或其他半导体工具的环境中。目前的双冷发电机设计还需要一个介质冷却剂和一个专用的循环油冷却系统来从发电机电极上带走热量。该实验计划旨在确定开发具有所需性能的紧凑型发电机模块和激励源的可行性。
英文摘要
The objective of the research is to explore the feasibility of developing compact, high concentration, ozone generation equipment for the demanding requirements of the semiconductor manufacturing and materials processing industry. Emerging processing technologies using ozone chemistry have given rise to the need for such equipment. Current generators are inadequate for the task and too large to be installed in the clean room environment next to the chemical vapor deposition system or other semiconductor tool. Current double-cooled generator designs also require a dielectric coolant and a dedicated recirculating oil cooling system to remove heat from the generator electrodes. The experimental program will be directed toward establishing the feasibility of developing a compact generator module and excitation source with the required performance.
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  • 资助金额:
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  • 财政年份:
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  • 财政年份:
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国内基金
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  • 批准年份:
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