Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas

这项研究讨论了在涉及到离子束和等离子体的高能工艺条件下，从裸露的半导体表面到完整的薄膜的初始成膜机制的基本方面。该项目的主要特点是使用在成膜过程中操作的现场光谱椭偏测量仪，从而能够测量成核路径、衬底损伤和薄膜特性。许多工艺参数的影响可以用经济的实验来确定，工艺变化对成膜动力学和所得到的膜性能的关联可以直接进行。一种新的浸没式椭圆偏振测量技术将被用来获取介质-薄膜界面的光学性质。选择了相关的和众所周知的电子材料进行研究：生长和沉积氧化物和氮化物的Si、Ge、InP和GaAs衬底。通过这种方式，将揭示一般和有意义的基础材料科学关系，并开发薄膜形成的模型。%这项研究体现了在高能工艺条件下半导体衬底上形成薄膜的工艺研究中的现场材料诊断。其目的是阐明从成核阶段开始的成膜机制，并将成膜与电子学性质联系起来。通过这种方式，将获得对技术相关材料的重要工艺的理解。

This research deals with the fundamental aspects of initial film formation mechanisms from a bare semiconductor surface to a complete thin film under energetic process conditions involving ion beams and plasmas. The key feature of the project is the use of in-situ spectroscopic ellipsometry operated during the film formation process which enables the measurement of nucleation pathways, substrate damage and film properties. The effects of many process parameters can be determined with an economy of experiments and the correlation of process variations on film formation kinetics and resulting film properties can be made in a direct way. A novel immersion ellipsometric technique will be used to access dielectric-film interface optical properties. Relevant and well known electronic materials are chosen for the study: Si, Ge, InP and GaAs substrates with grown and deposited oxides and nitrides. In this way, general and meaningful fundamental materials science relationships will be uncovered and models for film formation developed. %%% This research embodies in-situ materials diagnostics during process study of film formation on semiconductor substrates under energetic process conditions. The objective is to elucidate the film formation mechanisms from the nucleation stage forward and to correlate film formation with electronics properties. In this way an understanding of important processes for technologically relevant materials will be obtained.