Pulsed Electron-Beam-Generated Plasma Atomic-Layer Deposition (PEGPAD)

详细的等离子体和表面模拟与实验相结合，以了解合成和材料特性之间的基本和实际关系。将进行5-15keV脉冲和/或连续等离子体片以良好控制的高度通过衬底的实验，以研究从硅烷中沉积硅以改善硅膜的形成。通过改变脉冲形状、束流高度和工艺气体，可以控制到达衬底的物种的能量和类型，从而控制所得到的材料特性。这些研究与等离子体化学和表面动力学模型相结合，使沉积材料的结构和性能能够根据到达流量特性进行预测。提出了一种新的制备半导体薄膜的方法--脉冲电子束等离子体原子层沉积(PEGPAD)。这种创新的处理技术允许独立控制等离子体产生的物种、它们的能量和衬底温度，但有可能扩展到工业生产水平。

Detailed plasma and surface modelling are combined with experiments to understand the fundamental and practical relationships between synthesis and material properties. Experiments involving 5-15 keV pulsed and/or continuous plasma sheets passing over a substrate at well controlled heights will be conducted to investigate the deposition of Si from silane for improved silicon film formation. By varying the pulse shape, beam height and process gas, the energy and type of species arriving at the substrate can be controlled, and hence resultant material properties as well. These studies are combined with modelling of plasma chemistry and surface kinetics to enable the structure and properties of the deposited materials to be predicted from arrival flux characteristics. %%% A new approach called pulsed electron beam generated plasma atomic layer deposition(PEGPAD) is proposed as a method to deposit improved semiconductor films. This innovative processing technique allows independent control of plasma generated species, their energy, and the substrate temaperature, yet is potentially scalable to industrial production levels.