Heterostructure Synthesis of Silicon-Based Materials for Quantum Electronics

Kirk硅异质结构，例如Si/ZnS，代表了通过新颖的纳米电子器件设计来增加电子系统的功能密度的新方向。除了单结异质结构外，我们还提出了对ZnS/SiZnS/Si型双结和多层异质结构的实验和理论研究。 的主要努力将走向确定的物理条件，必要的外延生长的ZnS到Si以及Si到ZnS。 一旦生长，外延层将被研究以确定其电子传输、缺陷或掺杂剂掺入、界面条件以及会影响器件行为的其他特性（例如能带偏移）。 Si/ZnS单晶异质结构层的生长将在项目的第一阶段用分子束外延法进行。在该项目的后期阶段，将开发原子层eptitaxy，因为它为生产更高质量的材料提供了更大的潜力。 为了辅助实验生长和加工工作，将采用理论能带结构KKR计算来确定带隙排列，这将有助于细化和改善生长条件。 ***

9306293 Kirk Silicon heterostructures, such as Si/ZnS, represent new directions for increasing the functional density of electronic systems through novel nanoelectronic device designs. In addition to single junction heterostructures, we propose investigation double and multilayer heteorstructures of the type ZnS/SiZnS/Si both experimentally and theoretically. The main efforts will go toward the determination of the physical conditions necessary for epitaxial growth of both ZnS onto Si as well Si onto ZnS. Once grown, the epilayers will be studied to determine their electronic transport, defect or dopant incorporation, interface conditions, and other characteristics (e.g. band offsets) which would affect device behavior. The growth of monocrystalline heterostructure layers of Si/ZnS will be done with molecular beam epitaxy in the first stage of the project. In later stages of the project, atomic layer eptitaxy will be developed since it offers greater potential for producing higher quality materials. To assist the experimental growth and processing work, theoretical band structure KKR calculations will be employed to determine bandgap line-ups, which will help refine and improve the growth conditions. ***