Atomic Layer Epitaxy Deposition of N and P Doped Cubic Boron Nitride Thin Films for High Temperature SemiconductingDevices

9361718 Waters了解n型和p型掺杂立方氮化硼(CBN)薄膜的行为对于使电子器件能够利用cBN的热学和电学特性非常重要。在分子束外延(MBE)真空室中，用原子层外延(ALE)方法生长n型和p型掺杂CN。以前，我们已经能够通过使用Ionwerks开发的原子氮源和用于硼的电子束蒸发器来获得本质上高度立方的BN薄膜。使用Ionwerks开发的反冲离子质谱学(MSRI)技术和二次离子质谱学(SIMS)对掺杂CBN样品进行掺杂研究，以了解不同掺杂水平。我们将分析相应掺杂的各种浓度能级(p型为Be和Mg；n型为Si和S)，以便我们有足够的能级来获得p-n函数。***

9361718 Waters Understanding the behavior on n- and p-type doped cubic boron nitride (cBN) thin films is important to ability to make electronic devices to take advantage of the thermal as well as electronic properties of cBN. n- and p-type doped cN will be grown using atomic layer epitaxy (ALE) in a molecular beam epitaxy (MBE) vacuum chamber. Previously we have been able to achieve BN films which are highly cubic in nature through the use of an atomic nitrogen source developed at Ionwerks and an electron beam evaporator for the boron. A dopant study using mass spectroscopy of recoiled ions (MSRI) technique developed at Ionwerks and secondary ion mass spectroscopy (SIMS) to understand the various levels of doping will be performed on the doped cBN samples grown. The various concentration levels of the corresponding dopants (Be and Mg for p-type; Si and S for n-type) will be analyzed so that we have a sufficient level to obtain a p-n function. ***