ENGINEERING RESEARCH EQUIPMENT: Low-Energy Ion Gun System for Growing III-V Nitrides

9412073 Tu加州大学圣地亚哥分校(UCSD)电气和计算机工程系建议购买一种大电流、低能量的离子枪系统，用于生长高温电子和蓝色发射光电应用中的大禁带III-V氮化物。通过质量分离，可以选择所需的物种，以减少背景杂质污染。当能量低于损伤阈值和高于外延生长阈值时，可以获得无损伤的外延层。在大的离子束电流下，生长速度可以是可观的和实用的。这种生长氮化物的新能力将使许多教员能够以全面和一致的方式研究生长、表征和加工方面的问题；例如，通过扫描隧道显微镜进行外延的初始阶段；肖特基势垒高度和欧姆接触；以及干法刻蚀特性。***

9412073 Tu The Department of Electrical and Computer Engineering at the University of California, San Diego (UCSD) proposes to purchase a high-current, low-energy ion gun system for growing large-bandgap III-V nitrides for high-temperature electronic and blue emission optoelectronic applications. With mass separation, the desired species can be selected to reduce background impurity contamination. At energies below the damage threshold and higher than the expitaxial growth threshold, and undamaged epitaxial layer can be achieved. With a large ion-beam current, the growth rate can be substantial and practical. This new capability of growing nitrides will allow a number of faculty members to pursue--in a comprehensive and cohesive manner-issues in growth, characterization, and processing; for example, the initial stage of epitaxy by scanning tunneling microscopy; Schottky barrier height and ohmic contacts; and dry etching characteristics. ***